Simulation study of 2D electron density in primed and unprimed subband thin-body double-gate nano-MOSFET of three different thicknesses and two temperature states

This paper presents a theoretical simulation study for electrical characteristics of double-gate (DG) nano-MOSFET at equilibrium thin-body condition. The electrical characteristics under studied are subband energy (including unprimed and primed subbands) as well as 2D electron density at 77K and 300K ambient temperatures. The values of silicon body thickness TSi are 1.0nm, 1.5nm and 2.0nm. The electron transport models used in NanoMOS simulation tool covered quantum model and classical model. The simulation output data are discussed based on quantum effects and property of particle-wave duality of electron. In quantum model, low temperature 77K exhibits wave interference effects whereas high temperature 300K exhibits particle nature. This is due to inelastic electronphonon collisions (quantized lattice vibrations) at high temperature. These inelastic collisions cause dephasing events. This decoherence causes nanodevices to exhibit classical behavior and is the most challenging problem faces when developing quantum computers. Currently, quantum computing is still in early development state. This study attempts to relate silicon-based nanodevice theory with a technology for quantum information processing. Quantum computers may become reality by incorporating the silicon semiconductor technology used by current electronic industry. The most advanced quantum computers have been established only in very small systems, such as an array of individual phosphorus donor atoms in pure silicon lattice in Kane quantum computer. So, the motivation for this study is to scale the quantum computer systems to very large sizes by using silicon nano-MOSFET. However, at large quantum computer systems, quantum errors occur due to decoherence. To solve this problem, large size quantum computers made from silicon nano MOSFET should operate at cryogenic temperature (extremely low temperature) where electrons behave like wave. Quantum mechanics enables nanodevice systems to store and manipulate a vast amount of information. Therefore, nanodevice is simulated in this paper in order to examine quantum computer.