This paper presents two novel full adder cells based on Carbon Nanotube Field Effect Transistor (CNTFET) technology. According to unique specifications of CNTFET, and its similarity to conventional MOSFET technology, CNTFET technology is considered as a good successor for conventional MOSFET technology in nano-electronic in near future. The full adder cells benefit from less power consumption, delay time and occupied area comparing to peer designs. All CNTFET presented and previous designs have been carried out using Synopsys HSPICE in a realistic test bench and other various strict conditions in 32 nm technology. The Simulation results show that presented adders perform better comparing
the previous designs.
