This paper provides the analysis of a silicon P-I-N waveguide. The analysis is performed by simulating the said waveguide by applying the electro-optic carrier-depletion effect. Three design parameters have been altered, namely the rib waveguide dimensions, the doping concentration and the electrical contacts distance to the waveguide. The simulation generates the free carrier concentration around a specific region of the waveguide and the waveguide effective index change in response to the voltage applied.
