Thin films of SnO2 were deposited by chemical vapor deposition method. Group of
these films was annealed for 60 minutes at temperature (100, 200, 300, 400) ºC in air and
another group was annealed in vacuum for the same period and the same temperatures.
Structural properties have been studied for all films using XRD technique. It was found that
the intensity of the preferred orientation plain was increased in both types of annealing.
Current-voltage measurements was carried out using four point probe unit for all films and
sheet resistance (RS) was calculated. The effect of annealing temperature on RS was studied.
It was found that its value increases with annealing temperature increment for films
annealed in air, while it decreases for films annealed in vacuum within the studied range.
Transmission percent for some films was measured in the visible region. It was found that it
increases with annealing temperature for films annealed in air while it slightly decreases for
samples annealed in vacuum. Figure of merit (Q) was calculated for all annealed films. Its
value increases with the increasing of annealing temperature for films annealed in vacuum
while it decreases for films annealed in air within the studied range.
