Studying the different effects of gamma and x-ray irradiation on the electrical properties of silicon diode type 1N1405
Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
Date Issued
2009-01
Author(s)
Jassim M. Najim
Sana'a University
Abstract
The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is the difference between the electrical properties of the same diode without irradiation of x-ray.
