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  1. Home
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  5. A review on the different techniques of GaN heteroepitaxial growth: current scenario and future outlook
 
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A review on the different techniques of GaN heteroepitaxial growth: current scenario and future outlook

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2020-01
Author(s)
Anis Suhaili Bakri
Universiti Tun Hussein Onn Malaysia
Nafarizal Nayan
Universiti Tun Hussein Onn Malaysia
Ahmad Shuhaimi Abu Bakar
Universiti Malaya
Muliana Tahan
Universiti Tun Hussein Onn Malaysia
Nur Amaliyana Raship
Universiti Pertahanan Nasional Malaysia
Wan Haliza Abdul Majid
Universiti Malaya
Mohd Khairul Ahmad
Universiti Tun Hussein Onn Malaysia
Soon Ching Fhong
Universiti Tun Hussein Onn Malaysia
Mohd Zainizan Sahdan
Universiti Tun Hussein Onn Malaysia
Mohd Yazid Ahmad
Nanorian Technologies Sdn Bhd
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20JAN%202020%20Vol%2013/Vol_13_No_1_2020_20_199-220.pdf
https://hdl.handle.net/20.500.14170/14583
Abstract
Although Metal-Organic Chemical Vapour Deposition (MOCVD) is the most common technique to grow III-nitride films for light-emitting diode (LED) application, there are still several open questions such as the dislocations in LED structures and low thermal conductivity. The solutions to such problems have been approached by various deposition techniques over the past few years. In this review, the properties of gallium nitride (GaN) grown using different techniques and the consequences of the heteroepitaxial layers are discussed. At first, the general properties of GaN and its application for optoelectronic devices are presented briefly. To improve the crystallinity of GaN, it is necessary to identify and evaluate the defects present in the heteroepitaxial layers, which lead to poor crystal quality of films, and eventually to find an approach to overcome these issues. Several approaches using various substrates that have been published are discussed here and, finally, the directions of a new potential method for GaN growth using the magnetron sputtering technique are described.
Subjects
  • Aluminium-gallium nit...

  • Film defects

  • Gallium nitride

File(s)
A Review on the Different Techniques (1.32 MB)
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