This work presents an experimental analysis of the substrate bias influence on the operation of Silicon Nanowire Field Effect Transistor (SiNW-FET). The device analysis has been performed by using atomic force microscope (AFM) and scanning electron microscope (SEM) to obtain the surface morphological characterization. Then, the electrical characterization was measured over a linear DC sweep, range from -1.5 V to 0.6 V with a step voltage of 0.01V and the variation on the substrate bias applied to the sample from -1V to 0V. As a result, the back gate was found to influence the conductivity of the nanowire with a higher than 0.79 V gate voltage to be applied. The device demonstrated a good behavior of p-type silicon nanowire field effect transistor and capable to operate as a biosensing device.
