Simple and inexpensive mask layout design on a transparency film were demonstrated using the conventional complementary metal oxide semiconductor (CMOS) technique to produce interdigitated electrodes (IDEs) for biomedical biosensors applications. Lift-off techniques were implemented during photolithography process in order to pattern an electrode widths of 200μm, 300μm, 400μm and 500μm, respectively with a standardized 400μm gap spacing spiral IDEs. Due to the effect of the transparent mask, a fabrication of these spiral IDEs resulted in shrinkage of electrode width and increment of the gap spacing. Among these electrode sizes, the conductance of 300μm, 400μm and 500μm electrode width were successfully examined as compared to 200μm.
