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  5. Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
 
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Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
Date Issued
2009-07
Author(s)
Alwan M. Alwan
University of Technology
Narges Z. Abdulzahra
University of Technology
Naser Mahmoud Ahmed
Universiti Malaysia Perlis
N. H. A. Halim
Universiti Malaysia Perlis
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%202009/IJNeaM_2_2_3_157-161.pdf
https://hdl.handle.net/20.500.14170/1917
Abstract
The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).
Subjects
  • Porous silicon

  • Oxidation

  • Optical properties

File(s)
Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices.pdf (2.22 MB)
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