In this study, rectification behavior and noise spectra of a graphene based four-terminal ballistic rectifier are reported utilizing semi-classical drift-diffusion 3D modeling. The room temperature DC and RF characteristics of the novel rectifier are demonstrated considering the traps in the material similar to a real device, reducing the rectification efficiency from 0.5% to 0.35%. The responsivity and noise equivalent power of about 89.21 mV mW-1 and 97.52 pW Hz-1/2, respectively, are obtained for different frequencies varying from 50 Hz to 1 THz. Furthermore, the noise spectral analysis of the device predicts a minimum low frequency noise, which depends upon the carrier concentration inside the device active region rather than mobility, and hence enables potential applications as THz detectors for imaging.
