γ-MnS thin films were prepared on glass substrate by spray pyrolysis method at 280 °C. The optical constants and thickness of the films were extracted using the pattern search optimization technique in combination with a seed preprocessing procedure (spPS). Refractive index dispersion of the films was analyzed by using the concept of the single oscillator model. The values of the oscillator energy, E0, and the dispersion energy, Ed, were determined as 8.83 eV and 5.65 eV, respectively. The analysis of the optical properties of the γ-MnS film showed a direct transition with energy band gap of 2.74 eV. Utilizing Hall Effect measurement, we have determined values of the resistivity ρ which equals to 1150 Ωcm. The positive value of hall coefficient showed a p-type in nature of the obtained thin film. The maximum of photocurrent density estimated by Yablonovitch limit is equal to 46 mA/cm2.
