Multi-function devices fabricated from lanthanum oxide (La2O3)-doped NiO thin films at 0, 2, 4, and 6% wt on porous silicon (PS) substrates were prepared by Pulsed Laser Deposition (PLD) method. PS was fabricated using n-type Si with (111) orientation by the photoelectrochemical etching process (ECE) at a constant etching time of 20 minutes and current density of 15 mA/cm2. X-ray Diffraction (XRD) and AFM results showed uniform morphology and good crystal quality of the synthesized nanostructures. The energy gap (Eg) of NiO is 3.25 eV, and it increased as the doping ratio was increased. Gas sensing and UV-detection were studied respectively. The maximum sensitivity to H2S gas was observed in the film doped with 6% La2O3 at 100ºC and found to be 3500%. The photosensitivity was 66% for NiO/PS and 118% with La2O3 doping ratio of 6%. The novelty of this work is to use a very simple and low-cost method Pulsed Laser Deposition (PLD) to growth La2O3 doped NiO as compared with other technique which used to fabricate nanostructure that is either very expensive or very time-consuming.
