Tijjani Adam
Thumbnail Image
Preferred name
Tijjani Adam
Official Name
Tijjani, Adam
Alternative Name
Adam, T.
Adama, Tijjani
Adam, Tijjani
Adam, Tijjan
Tijjani, A.
Main Affiliation
Scopus Author ID
55074964600
Researcher ID
AAH-5534-2019

Research Output

Filters

1
1
1
1
Reset filters

Settings
Now showing 1 - 1 of 1
  • Publication
    Development of silicon nanowire lab-on-chip microfluidics integrated biosensor for low concentration bio-molecules detection
    ( 2015)
    Tijjani Adam
    Lab-on-chip fabricated with one-dimensional nanowires offer excellent electrical properties where bio molecular analysis at very low concentrations is becoming increasingly relevant for medical and research communities. Good number of techniques and promising results has been established for detecting small concentrations; however, for high-throughput measurements and label-free detection are still area of fresh investigation. Many research groups have reported high level of bio recognition by using semiconductor nanowire. The semiconductors silicon nanowire biosensor utilizes a Nano wire between two conducting materials. The nanowire has its atoms concentrated on its surface. Thus, any small changes in the charges present on the nanowire will cause a change in the flow of current. In this thesis, a simulation study coupled with experimental approach to explain the change in wire surface behavior as function of the surface charge. The linear behavior of the conductivity to increase the sensitivity of a semiconducting nanowire biosensor is ascertained. The silicon wire should be between 5 to 20nm to allow mean distance between atoms, the oxide should be as thin as possible for optimum surface integrity, and the functional layer should be thin and have a high dielectric constant. The ionic concentration of the electrolyte should be kept low in order to have a large Debye screening length. To confirm these theoretical results, Silicon nanowire of ≈ 15nm was fabricated using conventional photolithography coupled with dry etching process. To determine the capability of the device, it subjected to various pH values and to achieve this, the device is being operated based on the principle of Field Effect Transistor (FET). The surface of the device is hole dominated (p-type material).