Muammar Mohamad Isa
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Preferred name
Muammar Mohamad Isa
Official Name
Muammar , Mohamad Isa
Alternative Name
Isa, M. M.
Mohamad Isa, M.
Isa, Muammar Mohamad
Mohamad Isa, Muammar
Isa, M. Mohamad
Main Affiliation
Scopus Author ID
57202563525
Researcher ID
N-2105-2017

Research Output

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  • Publication
    Numerical simulation and characterization of silicon based OR logic gate operation using self-switching device
    ( 2021-12)
    Y.X. Goh
    ;
    Nor Farhani Zakaria
    ;
    Y. L. Tan
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    A. K. Singh
    Logic gates are the main components inside the integrated circuit used for almost every technological application. Nowadays, in order to enhance the performance of the smart device, while targeting in cut down of the fabrication cost and achieve low power consumption, lithography-based VLSI design technology on silicon are still being widely applied. Hence, an OR gate structure, a silicon based self-switching device (SSD) is introduced and investigated in this project. Such device is believed capable to act as an alternative for a low-powered logic gate application, suitable for CMOS devices. The SSD has an advantage in term of simplicity in fabrication process with a very low threshold voltage. Since SSD characteristics is similar to a conventional diode characteristic, the gate is designed in ATLAS Silvaco device simulator based on a diode logic to perform OR logic function after a validation of the physical and materials parameters. The electrical characterization and structural analysis were also done to observe the electrical performance and physical condition in the device. The simulated design showed a good OR logic output response with the inputs, and acceptable output ranged from around 4.5 to 4.8 V with 5 V HIGH inputs. The results from this OR gate characterization may assist in developing the logic gate for device integration and may act as a reference for future complex integrated circuit design.
  • Publication
    Rectification performance of self-switching diode in various geometries using ATLAS simulator
    (IEEE, 2017-01-03)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Zarimawaty Zailan
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Sanna Taking
    Characterization on a planar nano-device, known as self-switching diode (SSD) aimed for rectification application at high frequencies is reported. Simulation has been conducted on InGaAs-based SSD with 70 nm L-shaped channels using twodimensional (2D) ATLAS simulator. The current-voltage (I-V) characteristic of the device is found asymmetrical, similar to I-V behavior of a diode. The structure geometries of the channel are varied in term of channel length, channel width, and trenches width to observe the I-V behavior of the device. Furthermore, the curvature co-efficient of the SSD has been evaluated by extrapolating the simulated I-V graphs and the rectification performance of each configuration has been observed and concluded. The results obtained can assist the optimization in the design of the SSD to efficiently operate as microwave rectifier, especially in radio frequency harvesting application.
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