Mohammad Nuzaihan Md Nor
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Preferred name
Mohammad Nuzaihan Md Nor
Official Name
Mohammad Nuzaihan , Md Nor
Alternative Name
Nuzaihan, M. N.M.
M.Nuzaihan, M. N.
Md Nor, Mohammad Nuzaihan
Nuzaihan, M. M.
Nor, M. N.Md
Md Nor, M. Nuzaihan
Main Affiliation
Scopus Author ID
57219031365
Researcher ID
FMD-4992-2022

Research Output

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Fabrication of nano and micrometer structures using electron beam and optical mixed lithography process

2011-01 , S. F. Abd Rahman , Uda Hashim , Mohammad Nuzaihan Md Nor , M. E. A. Shohini

In this paper, the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material are presented. The resist used to demostrate this EBL pattern creation is ma-V 2403 which is a negative tone photoresist series, while positive resist PRI-2000A is used to transform photomask design using optical lithography. Three different patterns structures are fabricated on each sample namely alignment mark, silicon, nanowire and metal pad. The JEOL scanning electron microscopy (SEM) has been modified to integrate with RAITH software to be used for electron beam lithography. Nano-scaled nanowires were first patterned by EBL and formed by ICP ething followed by micro-sized-contact pads were defined bt photolithography process. The approachICP etching followed by micro-sized -pad were defined by photlithography process. The approach describe in this paper is a mix-and-match techniques uising both conventional photholilthography and advanced nanolithoragraphy, making use of an alignment strategy.

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Publication

Fabrication of nano and micrometer structures using electron beam and optical mixed lithography process

2011-01 , S. F. Abd Rahman , Uda Hashim , Mohammad Nuzaihan Md Nor , M. E. A. Shohini

In this paper, the fabricated pattern of nanometer and micrometer structures created with electron beam lithography (EBL) and optical lithography on silicon on insulator (SOI) material are presented. The resist used to demostrate this EBL pattern creation is ma-V 2403 which is a negative tone photoresist series, while positive resist PRI-2000A is used to transform photomask design using optical lithography. Three different patterns structures are fabricated on each sample namely alignment mark, silicon, nanowire and metal pad. The JEOL scanning electron microscopy (SEM) has been modified to integrate with RAITH software to be used for electron beam lithography. Nano-scaled nanowires were first patterned by EBL and formed by ICP ething followed by micro-sized-contact pads were defined bt photolithography process. The approachICP etching followed by micro-sized -pad were defined by photlithography process. The approach describe in this paper is a mix-and-match techniques uising both conventional photholilthography and advanced nanolithoragraphy, making use of an alignment strategy.

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Fabrication of silicon nanowires using Scanning Electron Microscope based Electron Beam Lithography method

2007 , Mohammad Nuzaihan Md Nor

Nanowires is a new class of materials that have attracted attention and great research interest in the last few years because of their potential applications in nanotechnology such as nanoelectronic, nanomechanical and biomedical engineering. Fabrication of Nanowires is one of the great challenges today. Conventional lithography methods are not capable to produce Nanowires and even with advance nanolithography sizes below 100 nm may not easily be achieved. The goal of this research work is to form and produce very small nanowires using a Top-Down Nanofabrication Method which involved Scanning Electron Microscope (SEM) based Electron Beam Lithography (EBL) method. Initially, the Top-Down Nanofabrication Method based on EBL was the design of the Nanowires Pattern Design (NPD). The NPD has been done by software called RAITH ELPHY Quantum GDSII Editor. The software package provides all the features needed to produce micro and nano scale structures starting from a structure design, post processing and design modification. The NPD is designed in various nanowires scale size from 100 nm down to 20 nm. Next, the nanofabrication process flow development which consists of the detailed parameters and recipes are developed for nanowires formation. Two (2) types of resist masks and three (3) types of nanowires are involved in the process flow development. The Resist Masks consist of PMMA Resist Mask and ma-N 2400 Series Resist Mask. It is used as a mask material or etches mask during Silicon Dioxide etching process. Fabrication of Nanowires is the main focus in this research work which consists of SiO2, Si, a-Si Nanowires. SiO2 Nanowires is used as insulation and hard mask for silicon etching in order to form Si Nanowires. Si Nanowires and a-Si Nanowires are widely used as semiconducting nanowires and has great potential in nanoelectronic devices. In order to produce very small nanowires, the dimensions, developments, etch profiles of nanowires and size-reduction by thermal oxidation was investigated. Finally, the combination on Top-Down Nanofabrication Method and size-reduction has resulted in successful reduction of Si Nanowires reduced from 100 nm to approximately 20 nm.

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