Dewi Suriyani Che Halin
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Preferred name
Dewi Suriyani Che Halin
Official Name
Halin, Dewi Suriyani Che
Alternative Name
Che Halin, Dewi Suriyani
Che Halin, D. S.
Suriyani Che Halin, Dewi
Halin, Dewi Suriyani Che
Halin, D. S.Che
Halin, D. S.C.
D. S., Che Halin
Main Affiliation
Scopus Author ID
36158106300
Researcher ID
AAC-9478-2019

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Annealing effects on Polycrystalline Silicon Germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique

2022-10 , Ayu Wazira Azhari , Eop, T. S. , Dewi Suriyani Che Halin , Uda Hashim , Sopian, K. , Zaidi, S. H.

Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.

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Factors of controlling the formation of Titanium Dioxide (TiO₂) synthesized using Sol-gel method – a short review

2022 , Kamrosni Abdul Razak , Dewi Suriyani Che Halin , Mohd. Mustafa Al Bakri Abdullah , Mohd Arif Anuar Mohd Salleh , Norsuria Mahmed , Azliza Azani , V. Chobpattana

There have been experiments on TiO₂ thin films synthesized utilizing sol-gel techniques. The sol-gel method is a straightforward technology that gives numerous benefits to the researcher, for instance, material's reliability, reproducibility, and controllability. Following from there, it can be utilized to make high-quality nano-structured thin films. According to previous studies, the TiO₂ films' characteristics occur to be highly dependent on the production parameters and initial materials utilized. Controlling the formation of TiO₂ thin films with the sol-gel method was momentarily discussed here.

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Effect of temperature and amount of Ag on TiO₂ thin film synthesised via sol–gel method

2025-02 , Dewi Suriyani Che Halin , Kamrosni Abdul Razak , Dharshini Karikalan , Lukasz Kaczmarek , Sebastian Miszczak , Ayu Wazira Azhari , Mohd Arif Anuar Mohd Salleh , Nur Izzati Muhammad Nadzri , Juyana A. Wahab , Mohd. Mustafa Al Bakri Abdullah

TiO₂ sol was produced via the sol–gel method with different amounts of AgNO₃ as the source of Ag. The Ag/TiO₂ thin film was obtained by spin coating and was annealed at various annealing temperatures (300°C, 400°C and 500°C) for 1 h. The effect of different amounts of AgNO₃ and different annealing temperatures on the TiO₂ thin films was studied by characterising the phase composition, surface morphology and water contact angle. Results from the x-ray diffraction (XRD) pattern show that with the addition of AgNO₃, Ag/TiO₂ can be formed at low annealing temperatures (300°C). At increased annealing temperatures (400°C and 500°C) and amounts of AgNO₃ (1.0 ml and 1.5 ml), Ag₂O and Ag₃O4 phases were observed. Flakes or flaky islands were formed on the thin film due to thermal expansion mismatch between the film and substrate, residual stress within the film or the release of volatile species when annealed at a low temperature of ⁓300°C. Increasing the temperature to 500°C resulted in the growth and coalescence of the flaky islands by the surface diffusion of adsorbed atoms (adatoms) and their annexation to the surface of existing nuclei. The water contact angle provides valuable insight into the surface interactions between water droplets and the surface of Ag/TiO₂ thin films. It was found that at 1.5 ml AgNO₃, the increased annealing temperature from 300°C to 500°C decreased the water contact angle of Ag/TiO₂ thin films from 83.86° to 34.62°, forming superhydrophilic properties, which indicated its excellent potential as a photocatalyst.

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Microstructure evolution of Ag/TiO2 thin film

2021 , Dewi Suriyani Che Halin , Kamrosni Abdul Razak , Mohd Arif Anuar Mohd Salleh , Mohd Izrul Izwan Ramli , Mohd. Mustafa Al Bakri Abdullah , Ayu Wazira Azhari , Kazuhiro Nogita , Hideyuki Yasuda , Marcin Nabiałek , Jerzy J. Wysłocki

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.

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The effect of polyethylene glycol addition on wettability and optical properties of GO/TiO2 thin film

2021 , Azliza Azani , Dewi Suriyani Che Halin , Kamrosni Abdul Razak , Mohd. Mustafa Al Bakri Abdullah , Marcin Nabiałek , Muhammad Mahyiddin Ramli , Mohd Fairul Sharin Abdul Razak , Andrei Victor Sandu , Wojciech Sochacki , Tomasz Skrzypczak

Modification has been made to TiO2 thin film to improve the wettability and the absorption of light. The sol-gel spin coating method was successfully used to synthesize GO/TiO2 thin films using a titanium (IV) isopropoxide (TTIP) as a precursor. Different amounts of polyethylene glycol (PEG) (20 to 100 mg) were added into the parent sol solution to improve the optical properties and wettability of the GO/TiO2 thin film. The effect of different amounts of PEG was characterized using X-ray diffraction (XRD) for the phase composition, scanning electron microscopy (SEM) for microstructure observation, atomic force microscopy (AFM) for the surface topography, ultraviolet–visible spectrophotometry (UV-VIS) for the optical properties and wettability of the thin films by measuring the water contact angle. The XRD analysis showed the amorphous phase. The SEM and AFM images revealed that the particles were less agglomerated and surface roughness increases from 1.21 × 102 to 2.63 × 102 nm when the amount of PEG increased. The wettability analysis results show that the water contact angle of the thin film decreased to 27.52° with the increase of PEG to 80 mg which indicated that the thin film has hydrophilic properties. The optical properties also improved significantly, where the light absorbance wavelength became wider and the band gap was reduced from 3.31 to 2.82 eV with the presence of PEG.

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Annealing effects on polycrystalline silicon germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique

2022-10 , Ayu Wazira Azhari , Eop, T. S. , Dewi Suriyani Che Halin , Sopian, K. , Uda Hashim , Zaidi, S. H.

Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.

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