Now showing 1 - 2 of 2
  • Publication
    Annealing effects on polycrystalline silicon germanium (SiGe) thin films grown on nanostructured silicon substrates using thermal evaporation technique
    ( 2022-10) ;
    Eop, T. S.
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    Sopian, K.
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    Zaidi, S. H.
    Polycrystalline SiGe thin films have been formed after thermal annealing of formerly vacuum evaporated a-Ge layers. The a-Ge thin films were deposited onto nanostructured Si substrates via low-cost thermal evaporation method. Then, the films were annealed in a furnace at temperatures ranging from 400 °C to 1000 °C resulting in crystal growth of the SiGe layers. In general, the annealing temperature for polycrystalline SiGe is between 600 °C – 800 °C. The crystalline structure of the SiGe layer is improved as a function of increased temperature. This is shown by the low FWHM of about 5.27 as compared to the commercially available Ge substrates where the FWHM value is about 5.06. This method also produces more relax Ge layer where the strain value is 0.261.
  • Publication
    Numerical simulation of lead-free tin and germanium based all perovskite tandem solar cell
    ( 2023-12)
    Rae-Ann Lim Jia En
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    ; ;
    Suhaila Sepeai
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    Norasikin Ahmad Ludin
    The ability to customize the materials bandgaps makes perovskite solar cells a promising candidate for hybrid-tandem applications. This allows them to effectively utilize parts of the solar spectrum that silicon-based solar cells cannot efficiently capture, resulting in higher absorption coefficients. However, there is a lack of research on lead-free all-perovskite tandem solar cells, and secondary data on materials is limited. One of the main challenges in previous studies is the high cost and solid structure of traditional silicon-based solar cells, which require significant storage space. Additionally, lead-based perovskite solar cells pose environmental concerns due to their water solubility and potential harmful effects upon consumption. To address these issues, thin-film perovskite solar cells with liquid solvents are employed in the solar cell design. Lead is replaced with germanium and tin-based perovskites, which exhibit comparable photovoltaic performance to silicon. In the present work, the OghmaNano simulation tool was utilized to conduct numerical simulation of the perovskite design. The perovskite solar cell layers were structured as follows: FTO/ZnO/MAGeI3/Spiro-OMeTAD/FAMASnGeI3/Cu2O/Au. The variables considered included optimum layer thicknesses and bandgaps, as well as the most suitable materials for the ETL and HTL, aiming to obtain the highest efficiency. Based on the simulation results, the proposed perovskite structure shows remarkable photovoltaic parameters. The Voc was measured at 0.84 V Jsc of 16.1 mA/cm2, FF of 0.825, and PCE that reached 11.12%. This project contributes to future research on materials for the ETL and HTL of lead-free, tin and germanium based APTSCs.
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