Ahmad Fariz Hasan
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Preferred name
Ahmad Fariz Hasan
Official Name
Hasan, Ahmad Fariz
Alternative Name
Hasan, A. F.
Hassan, Fariz
Hasan, Ahmad Fariz
Hassan, Ahmad Fariz
Main Affiliation
Scopus Author ID
55975778800
Researcher ID
DWG-8508-2022

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  • Publication
    Design and characterization of a 3.5 GHz CMOS power amplifier for low-band 5G applications
    (Taylor and Francis Ltd., 2025)
    Ahmad Fariz Hasan
    ;
    Sohiful Anuar Zainol Murad
    ;
    Faizah Abu Bakar
    ;
    Rohana Sapawi
    A 3.5 GHz CMOS power amplifier (PA) designed for 5G applications is presented in this study, utilizing the 0.18 µm RF CMOS process technology. The circuit architecture comprises two stages: the first stage employs a cascode topology with a negative voltage applied to the transistor body technique to achieve sufficient gain and minimize current, thereby reducing power consumption. In the second stage, to ensure high efficiency, a class-E amplifier is being used. Measurement results indicate a power gain (S21) of 17.2 dB, a power-added efficiency (PAE) of 45.6% and a saturated power (Psat) of 8.5 dBm, obtained at 3.5 GHz. These findings validate the suitability of the proposed design at low-band frequency for 5G applications. The chip area for the proposed design is 2.45 mm². The discrepancy between simulation and measurement is due to the parasitic in the layout design.