Shahrir Rizal Kasjoo
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Preferred name
Shahrir Rizal Kasjoo
Official Name
Shahrir Rizal, Kasjoo
Alternative Name
Kasjoo, S.
Kasjoo, Shahrir R.
Kasjoo, S. R.
Shah K.
Main Affiliation
Scopus Author ID
36809748400
Researcher ID
ABI-6061-2020

Research Output

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Graphene self-switching diode-based thermoelectric rectifier

2020-09-30 , Kaushal B. , Garg S. , Prakash K. , Shahrir Rizal Kasjoo , Kumar S. , Gupta N. , Singh A.K.

This Letter demonstrates thermoelectric rectification in graphene self-switching diode (GSSD) on SiO2/Si substrate. Nanometre-scale nonlinear semiconductor device, called self-switching diode (SSD), has been utilised. Applied bias leads to a change in potential profile and effective channel width of GSSD resulting in diode like I-V characteristics. The excellent electronic properties of graphene potentially make it suitable for producing SSD's with high responsivity and low noise equivalent power (NEP). The designed GSSD demonstrates a high Seebeck coefficient (S) of 200 μV/K, voltage detection sensitivity, and NEP of 97.964 V/W and 0.6064 nW/Hz1/2, respectively. Furthermore, the effect of applying backgate voltage on the Seebeck coefficient has also been demonstrated in this work. The GSSD is presented as a potential thermoelectric rectifier, which can convert the thermal energy into useful electrical energy.

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MoS2 Self-Switching Diode-Based Low Power Single and Three-Phase Bridge Rectifiers

2024-01-01 , Garg S. , Sharma B. , Khanal G.M. , Kumar S. , Neena Gupta , Shahrir Rizal Kasjoo , Song A. , Singh A.K.

This work presents the molybdenum di-sulphide three-phase bridge rectifier integrated circuit utilizing the novel self-switching diode. The self-switching diode has a planar architecture having I-V behavior similar to an ideal diode. The structure of SSD is utilized to design single phase and three phase rectifiers. The performance in terms of rectification efficiency, total harmonic distortion, ripple factor and cut-off frequency has been evaluated and compared for both single and three phase SSDBR. The three-phase self-switching diode bridge rectifier (3P-SSDBR) has a cut-off frequency of ∼400 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 4.73% and 0.59, respectively. While, the single phase self-switching diode bridge rectifier (1P-SSDBR) has a cut-off frequency of ∼300 MHz with minimum total harmonic distortion (THD) and ripple factor (RF) of 47.86% and 1.94, respectively. Further, to validate the obtained results, the simulation models have been calibrated with experimental and theoretical findings.

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Hybrid statistical and numerical analysis in structural optimization of silicon-based RF Detector in 5G Network

2022-02-01 , Tan Yi Liang , Nor Farhani Zakaria , Shahrir Rizal Kasjoo , Safizan Shaari , Muammar Mohamad Isa , Mohd Khairuddin Md Arshad , Arun Kumar Singh , Sharizal Ahmad Sobri

In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.

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