Rozana Aina Maulat Osman
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Preferred name
Rozana Aina Maulat Osman
Official Name
Rozana Aina, Maulat Osman
Alternative Name
Osman, R. A.M.
Osman, A. Rozana
Maulat Osman, Rozana Aina
Osman, Rozana A.M.
Osman, R.
Osman, R. A.Maulat
Main Affiliation
Scopus Author ID
37261764900
Researcher ID
DXB-4277-2022

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  • Publication
    Synthesis and physico-chemical characterization of nonlinear optical single crystals of S-carboxymethyl L-cysteine for optoelectronic devices applications
    (AIP Publishing, 2020)
    Azeezaa Varsha Mohammed
    ;
    Suresh Sagadevan
    ;
    Yasmin Abdul Wahab
    ;
    Rozana Aina Maulat Osman
    The S-carboxymethyl L-cysteine (SCLC) single crystals have been grown through slow evaporation technique. The lattice parameters of SCLC crystal have been determined using Single-crystal X-ray diffraction. From the transmission spectrum, the optical properties of the SCLC crystals have been investigated. The various functional groups of the SCLC crystal have been confirmed using the Fourier-transform infrared spectroscopy (FTIR). The mechanical properties have been studied using Vickers hardness tester. The nonlinear property is identified by Kurtz and Perry. Further, the electrical properties are studied.
      1  7
  • Publication
    Junction engineering in two-stepped recessed SiGe MOSFETs for high performance application
    ( 2020-01-08)
    Wahab Y.A.
    ;
    Soin N.
    ;
    Naseer M.N.
    ;
    Hussin H.
    ;
    Rozana Aina Maulat Osman
    ;
    Johan M.R.
    ;
    Hamizi N.A.
    ;
    Pivehzhani O.A.
    ;
    Chowdhury Z.Z.
    ;
    Sagadevan S.
    ;
    Thennarasan Sabapathy
    SiGe being one of the most diverse, emerging and richest material for MOSFETs is alluring the scientist due to its unique characteristics like high performance, high surface channel mobility and low threshold voltage as compare to that of silicon MOSFETs. In spite of so much cruciality, the performance of SiGe MOSFETs is being controlled by several factors like resistance and junction depth. These factors urged scientists to not relieve on the traditional methods of junction meteorology to utilize the actual potential and high performance of SiGe MOSFETs in terms of their application. Hence, a paradigm shift in junction engineering is being observed during last few years and discussed. The main focus of this paper is to highlight junction metrologies (ion implantation and annealing) that were tested on SiGe MOSFETs and to propose the most efficient and sustainable technique of junction engineering for high performance applications.
      4  26