Nurul Izza Mohd Nor
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Preferred name
Nurul Izza Mohd Nor
Official Name
Nurul Izza, Mohd Nor
Alternative Name
Nor, N. I.M.
Noor, N. I.Mohd
Mohd Nor, Nurul I.
Mohd Nor, Nurul Izza
Mohd Nor, N. Izza
Nor, Nurul Izza Mohd
Nor, N. Izza M.
Main Affiliation
Scopus Author ID
55229582100
Researcher ID
GPG-3116-2022

Research Output

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  • Publication
    Low-cost integrated circuit packaging defect classification system using edge impulse and ESP32CAM
    (Institute of Advanced Engineering and Science (IAES), 2025-02)
    Muhammad Adni Kamaruddin
    ;
    Mohd Syafiq Mispan
    ;
    Aiman Zakwan Jidin
    ;
    Haslinah Mohd Nasir
    ;
    Nurul Izza Mohd Nor
    Defects in integrated circuit (IC) packaging are inevitable. Several factors can cause defects in IC packaging such as material quality, errors in machine and human handling operations, and non-optimized processes. An automated optical inspection (AOI) is a typical method to find defects in the IC manufacturing field. Nevertheless, AOI requires human assistance in the event of uncertain defect classification. Human inspection often misses very tiny defects and is inconsistent throughout the inspection. Therefore, this study proposed a low-cost IC packaging defect classification system using edge impulse and ESP32-CAM. The method involves training a deep learning model (i.e., convolutional neural network (CNN)) using a dataset of non-defective and defective ICs on Edge Impulse. For defective ICs, the top surface of the ICs is deliberately scratched to imitate the cosmetic defects. ICs with scratch-free on their top surfaces are considered non-defective ICs. A successfully trained model using Edge Impulse is subsequently deployed on ESP32-CAM. The model is optimized to fit the limited resources of the ESP32-CAM. By using the built-in camera in ESP32-CAM, the trained model can perform a real-time image classification of non-defective/defective ICs. The proposed system achieves 86.1% prediction accuracy by using a 1,571 image dataset of defective and non-defective ICs.
  • Publication
    A 12 GHz LC-VCO Implemented with S’ shape Inductor using silicon-on sapphire substrate
    ( 2022-12)
    Nazuhusna Khalid
    ;
    Aimi Noorliyana Hashim
    ;
    Nurul Izza Mohd Nor
    ;
    Shahrir Rizal Kasjoo
    ;
    Zaliman Sauli
    ;
    Mohd Norhafiz Hashim
    ;
    M.S Mispan
    A voltage-controlled oscillator (VCO) is an electronic oscillator whose oscillation frequency is controlled by a voltage input. In a VCO, low-phase noise while consuming less power is preferred. The tuning gain and noise in the control signal produce phase noise; more noise or tuning gain implies more phase noise. Sources of flicker noise (1/f noise) in the circuit, the output power level, and the loaded Q factor of the resonator are all crucial factors that influence phase noise. As a result, creating a resonator with a high Q-factor is essential for improving VCO performance. As a result, this paper describes a 12 GHz LC Voltage- Controlled Oscillator (VCO) employed with a ‘S’ shape inductor to improve phase noise and power performance. The phase noise for the VCO was reduced using a noise filtering technique. To reduce substrate loss and improve the Q factor, the inductor was designed on a high-resistivity Silicon-on Sapphire (SOS) substrate. At 12 GHz, the optimised S’ shape inductor has the highest Q-factor of 50.217. At 10 MHz and 100 MHz, the phase noise of the 12 GHz LC-VCO was -131.33 dBc/Hz and -156.71 dBc/Hz, respectively. With a 3.3 V power supply, the VCO core consumes 26.96 mW of power. Based on the findings, it is concluded that using an ‘S’ shape inductor in the VCO circuit will enable the development of low-cost, high-performance, very low-power system-on-chip wireless transceivers with longer battery life.
      3  46
  • Publication
    Analysis of different piezoelectric materials on the film bulk acoustic wave resonator
    ( 2023-12)
    Nurul Izza Mohd Nor
    ;
    Nazuhusna Khalid
    ;
    Hasnizah Aris
    ;
    M. S. Mispan
    ;
    N. Aiman Syahmi
    The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 μm × 25 μm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.
      1  32