The surface modification by on Mercaptopropyltriethoxysilane (MPTES) done to enhance electrical behavior of nano-IDE -based sensor, silicon based active area was coated with MPTES. The electrical properties of modified nano-IDE were tested using impedance analyser by observing the changes in impedance with the frequencies There was increase as the concentration of the MPTES increase from 1 to 5%. The electrical conductivity increases as mobility increase with the surface attenuation by the MPTES. This increase in concertation observed increase of the electrical conductivity with carrier mobility increment, this indicate decrease of the Si-arsenic bond length, which caused the bandgap to be shortened, likewise, The device behaviour to surface modification was capacitive reactive in natured.
