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  1. Home
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  5. Simulation of Mos<inf>2</inf>based Asymmetric Nano-Channel Rectifier
 
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Simulation of Mos<inf>2</inf>based Asymmetric Nano-Channel Rectifier

Journal
Proceedings of the IEEE Conference on Nanotechnology
ISSN
19449399
Date Issued
2022-01-01
Author(s)
Garg S.
Sharma B.
Khanal G.M.
Gupta N.
Singh A.K.
Syal R.
Kumar S.
Kasjoo S.R.
DOI
10.1109/NANO54668.2022.9928647
Handle (URI)
https://hdl.handle.net/20.500.14170/8724
Abstract
Molybdenum disulfide (MoS2) has been utilized to demonstrate rectification behavior in an asymmetric channel similar to a diode-like I-V response. The demonstrated asymmetric device called self-switching diode is simulated by Silvaco TCAD software. The large signal analysis has been performed to estimate the frequency response. The diode shows NEP and responsivity of 6.50 nW/Hz1/2 and 59.11 V/W, respectively. The diode can be used for radio frequency (RF) rectification as it has a cut-off frequency of 191 MHz.
Funding(s)
Department of Science and Technology, Ministry of Science and Technology, India
Subjects
  • asymmetric nano-chann...

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