This study is conducted to investigate the effect of different annealing temperature on the growth of Silver doped Titanium Dioxide (AgTiO2 ) nanocrystalline thin films.AgTiO2 nanocrystalline thin films on silicon wafer have been prepared by sol–gel spin coating. The thin films were characterized for surface morphology and phase analysis by Scanning Electron Microscope (SEM) and X-ray diffraction (XRD. The films prepared by titanium tetraisopropoxide (TTIP) as the precursor under pH of 3.5 ± 0.5 and with annealing temperature of 300, 400, 500 and 600◦C for 2h soaking time. X-Ray diffraction shows that only Ag/TiO2 thin film annealed at 600◦C have anatase TiO2 phase. From SEM micrograph, there are cracks and pulled out thin film from the substrate, which were gradually minimize as the annealing temperature increase.
