Effect of working power and pressure on plasma properties during the deposition of TiN films in reactive magnetron sputtering plasma measured using Langmuir probe measurement

The ion, electron density and electron temperature during formation of TiN films in reactive magnetron sputtering system have been investigated for various settings of radio frequency (RF) power and working pressure by using Langmuir probe measurements. The RF power and working pressure able to affect the densities and plasma properties during the deposition process. In this work, a working pressure (100 and 20 mTorr) and RF power (100, 150 and 200 W) have been used for data acquisition of probe measurement. Fundamental of studied on sputter deposition is very important for improvement of film quality and deposition rate. Higher working pressure and RF power able to produce a higher ion density and reduction of electron temperature.