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Dependence of deposition bath temperature for p-electrodeposited-Cu₂O onto n-TiO₂/ZnO bilayer thin films

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cris.virtual.department Universiti Malaysia Perlis
cris.virtualsource.department 700875c8-4d19-4255-8143-1b8dbb168f19
dc.contributor.author Nurliyana Mohamad Arifin
dc.contributor.author Fariza Mohamad
dc.contributor.author Loh Zhi Xin
dc.contributor.author Rosniza Hussin
dc.contributor.author Anis Zafirah Mohd Ismail
dc.contributor.author Shazleen Ahmad Ramli
dc.contributor.author Norazlina Ahmad
dc.contributor.author Nik Hisyamudin Muhd Nor
dc.contributor.author Mohd Zainizan Sahdan
dc.contributor.author Mohd Zamzuri Mohammad Zain
dc.contributor.author Masanobu Izaki
dc.date.accessioned 2025-10-03T07:50:12Z
dc.date.available 2025-10-03T07:50:12Z
dc.date.issued 2023
dc.description.abstract The synthesis of semiconductor materials is crucial to produce the best properties of heterojunction thin films solar cell. Titanium dioxide (TiO2) is coupled with zinc oxide (ZnO) to promote high transmittance due to low utilization of the solar spectrum. In this project, p-Cu2O as absorbing layer was deposited onto n-TiO2/ZnO bilayer thin film which acts as window layer in order to complete the device. Several bath temperatures of 30, 40, 50 and 60 °C were manipulated during Linear Sweep Voltammetry (LSV) measurement and electrodeposition process for p-Cu2O thin film. The LSV measurement was employed to determine the potential value and electrochemical properties of p-Cu2O thin film. Based on findings, the suitable deposition potential chosen is − 0.4 V vs Ag/AgCl. The p-Cu2O thin film deposited at bath temperature of 40 °C exhibited the highest diffraction peak intensity in the (111)-preferred plane orientation showing high crystallinity. The surface morphology of homogeneous and well-defined triangular shape with thickness of 4.93μm was observed. The estimated bandgap energy of 1.92 eV acquired indicated to p-Cu2O thin film. The n-TiO2/ZnO bilayer/p-Cu2O heterojunction thin film was successfully fabricated and showed significant electrical rectification properties. Here in, bath temperature influenced to the enhancement of heterointerface growth development in several properties.
dc.identifier.doi 10.1016/j.ijleo.2023.171205
dc.identifier.uri https://www.sciencedirect.com/journal/optik
dc.identifier.uri https://hdl.handle.net/20.500.14170/14617
dc.language.iso en
dc.publisher Elsevier
dc.relation.ispartof Optik
dc.relation.issn 0030-4026
dc.subject Bath temperature
dc.subject Electrodeposition
dc.subject P-Cu2O thin film
dc.subject P-n heterojunction
dc.subject Sol-gel spin coating
dc.subject n-TiO₂/ZnO bilayer thin film
dc.title Dependence of deposition bath temperature for p-electrodeposited-Cu₂O onto n-TiO₂/ZnO bilayer thin films
dc.type journal-article
dspace.entity.type Publication
oaire.citation.endPage 11
oaire.citation.startPage 1
oaire.citation.volume 288
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Tun Hussein Onn Malaysia
oairecerif.author.affiliation Universiti Malaysia Perlis
oairecerif.author.affiliation Toyohashi University of Technology
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