Publication:
InGaAs-based planar barrier diode as microwave rectifier
InGaAs-based planar barrier diode as microwave rectifier
| cris.author.scopus-author-id | 57191032557 | |
| cris.author.scopus-author-id | 36809748400 | |
| cris.author.scopus-author-id | 55603553500 | |
| cris.author.scopus-author-id | 57202563525 | |
| cris.author.scopus-author-id | 57211870224 | |
| cris.author.scopus-author-id | 35559852900 | |
| dc.contributor.author | Zakaria N.F. | |
| dc.contributor.author | Kasjoo S.R. | |
| dc.contributor.author | Zailan Z. | |
| dc.contributor.author | Isa M.M. | |
| dc.contributor.author | Arshad M.K.M. | |
| dc.contributor.author | Taking S. | |
| dc.date.accessioned | 2025-01-13T06:45:32Z | |
| dc.date.available | 2025-01-13T06:45:32Z | |
| dc.date.issued | 2018-06-01 | |
| dc.description.abstract | In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current-voltage characteristics; thus it can be used as a rectifying device. The PBD's working principle is explained using thermionic emission theory. Furthermore, by varying the PBD's geometric design, the asymmetry of the current-voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270GHz with a curvature coefficient peak of 14V%1 at a low DC bias voltage of 50mV. | |
| dc.identifier.doi | 10.7567/JJAP.57.064101 | |
| dc.identifier.scopus | 2-s2.0-85047899812 | |
| dc.identifier.uri | https://hdl.handle.net/20.500.14170/11449 | |
| dc.relation.grantno | undefined | |
| dc.relation.ispartof | Japanese Journal of Applied Physics | |
| dc.relation.ispartofseries | Japanese Journal of Applied Physics | |
| dc.relation.issn | 00214922 | |
| dc.title | InGaAs-based planar barrier diode as microwave rectifier | |
| dc.type | Journal | |
| dspace.entity.type | Publication | |
| oaire.citation.issue | 6 | |
| oaire.citation.volume | 57 | |
| oairecerif.affiliation.orgunit | Universiti Malaysia Perlis | |
| oairecerif.affiliation.orgunit | Universiti Malaysia Perlis | |
| oairecerif.affiliation.orgunit | Universiti Malaysia Perlis | |
| oairecerif.affiliation.orgunit | Universiti Malaysia Perlis | |
| oairecerif.affiliation.orgunit | Universiti Malaysia Perlis | |
| oairecerif.affiliation.orgunit | Universiti Malaysia Perlis | |
| oairecerif.citation.number | 064101 | |
| person.identifier.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| person.identifier.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| person.identifier.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| person.identifier.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| person.identifier.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| person.identifier.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| person.identifier.scopus-author-id | 57191032557 | |
| person.identifier.scopus-author-id | 36809748400 | |
| person.identifier.scopus-author-id | 55603553500 | |
| person.identifier.scopus-author-id | 57202563525 | |
| person.identifier.scopus-author-id | 57211870224 | |
| person.identifier.scopus-author-id | 35559852900 |