A single-step of pulsed laser deposition method was used to manufacture (Cu2O) cuprous oxide Nano thin films on Silicone substrates at low growing temperature in this study. This research focuses on the deposition of copper oxide using a pulsed laser deposition approach with a reactive pulsed laser as a deposition technique. The pulsed laser employed had a wavelength of 1064 nm, pulse duration of 10 ns, and a substrate temperature of 350o C, with laser energy ranging from 800-1200 mJ, rising 200 mJ per run. The effects of three parameters of pulsed laser energies (800-1200 mJ) was used to explored in order to maximize the structural and morphological quality. (XRD) X-ray diffraction, scanning electron microscopy with field emission (FESEM), The Atomic force microscopy were used to evaluate the effects of laser pulsed energies on the characteristics of Cu2O Nano films (FESEM). When compared to a crystalline silicon surface, the results of AFM show a higher possibility of better absorption and hence lower reflection, finally a compute the optical energy band gap values for the deposited films by studying the influence of laser intensities on photoluminescence characteristics..
