Zarimawaty Zailan
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Zarimawaty Zailan
Official Name
Zarimawaty, Zailan
Alternative Name
Zailan, Z.
Zailan, Zarimawaty
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Scopus Author ID
55603553500
Researcher ID
EHB-9502-2022

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  • Publication
    Application of Taguchi method in optimization of structural parameters in self-switching diode to improve the rectification performance
    ( 2020-01-08)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Zarimawaty Zailan
    ;
    Mokhar M.B.M.
    ;
    Juhari N.
    This paper presents the use of Taguchi method in the optimization process of a Self-switching Diode (SSD) as a Terahertz rectifier to obtain the optimal parameters for rectification. The rectification performance is mainly contributed by a parameter known as curvature coefficient, γ which is derived from the current-voltage (I-V) behavior of the device and can be altered by varying the device's geometrical structure. The parameters involved are the channel length, channel width and trenches width of the device, and the rectification performance are observed based on the peak of γand its corresponding bias voltage. Using Taguchi method for design of experiment (DOE), effects on the interaction among these parameters are investigated by employing the orthogonal array and evaluation of the signal-to-noise (S/N) ratio both in the peak of γand its corresponding bias voltage. The proposed parameters using this method showed γ peak of 32 V-1 and 30 V-1 at DC bias of 30 mV and zero-bias, respectively.
  • Publication
    Self-switching diodes as RF rectifiers: Evaluation methods and current progress
    ( 2019-06-01)
    Zakaria N.
    ;
    Shahrir Rizal Kasjoo
    ;
    Isa M.
    ;
    Zarimawaty Zailan
    ;
    Arshad M.
    ;
    Sanna Taking
    In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.
  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Idris N.B.
    ;
    Rosli K.A.
    ;
    Zakaria N.F.
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nurul Bariah Idris
    ;
    Khairul Affendi Rosli
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
      7  2
  • Publication
    Improved rectification performance and terahertz detection in hybrid structure of self-switching device (SSD) and planar barrier diode (PBD) using two-dimensional device simulation
    ( 2020-01-01)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Song A.
    Recently, simulations of In0.48Ga0.52As-based Planar Barrier Diode (PBD) and Self- Switching Device (SSD) as millimeter-wave rectifiers were reported. Both PBD and SSD have a planar structure, but with different insulating shapes and working principles. In this work, a hybrid structure of the reported PBD and SSD in a parallel configuration is proposed, to exploit the advantages of each device. The advantages of high rectifying properties in the SSD and fast switching rate of the PBD are combined in this hybrid structure in order to obtain an improved rectification performance at zero-bias in the near terahertz frequency region. Analysis of the curvature co-efficient, γ, which is defined as the ratio of the second order to the first order derivative of the device’s I-V function was performed to evaluate the rectification performance. AC transient analyses were then executed in various frequencies to imitate the high-frequency signal inputs. By using this hybrid structure, the highest value of γ achieved has been improved to ~19 V-1 at 70 mV, and ~6 V-1 at zero- bias (compared to the previous results on PBDs). The estimated cut-off frequency obtained was ~360 GHz (0.36 THz), operating at zero-bias.