Nazuhusna Khalid
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Nazuhusna Khalid
Official Name
Nazuhusna, Khalid
Alternative Name
Nazuhusna, Khalid
Khalid, N.
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Scopus Author ID
35208616600
Researcher ID
CZJ-6151-2022

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The Design and Analysis of High Q Factor Film Bulk Acoustic Wave Resonator for Filter in Super High Frequency

2021-12-01 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Nur Anira Asyikin Hashim , Shahrir Rizal Kasjoo , Zaliman Sauli , Lam Hok Lang , Chow Shi Qi

Filtering process is one of the highlighted issues when the operating frequency is up to medium or high GHz range in wireless transceiver system. The development of high performance, small size, filter on chip operating in GHz frequency range is the requirement of present and future wireless transceiver systems. The conventional frequency bands, below 6 GHz are already congested, thus, to satisfy this demand, the research into transceiver systems working at frequencies higher than 6 GHz has been growing. Therefore, this work proposed the design and optimization of film bulk acoustic wave resonator (FBAR) operating in frequency 7 GHz to 10 GHz with high quality (Q) factor. The effect of using different geometrical parameters to achieve high Q factor FBAR in these frequency bands is analysed. The designed FBAR achieved Q factor of 1767 at 7 GHz and 1237 at 10 GHz by using aluminium nitride as the piezoelectric thin film and molybdenum as the electrode.

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Analysis of Different Piezoelectric Materials on the Film Bulk Acoustic Wave Resonator

2023-12-01 , Nurul Izza Mohd Nor , Nazuhusna Khalid , Hasnizah Aris , Mispan M.S. , Syahmi N.A.

The performance of film bulk acoustic wave resonators (FBAR) is greatly dependent on the choice of piezoelectric materials. Different piezoelectric materials have distinct properties that can impact the performance of FBAR. Hence, this work presents the analysis of three different piezoelectric materials which are aluminum nitride (AlN), scandium aluminum nitride (ScAlN) and zinc oxide (ZnO) on the performance of FBARs working at resonance frequencies of 6 GHz until 10 GHz. The one-dimensional (1-D) modelling is implemented to characterize the effects of these materials on the quality (Q) factor, electromechanical coupling coefficient (k2 eff) and bandwidth (BW). It is determined that employing ScAlN in FBAR results in the highest Q factor, ranges from 628 to 1047 while maintaining a relatively compact area (25 µm × 25 µm) and thickness (430 nm to 720 nm). However, ScAlN yields the narrowest BW, measuring 0.11 GHz at 6 GHz, as opposed to AlN and ZnO, which exhibit broader bandwidths of 0.16 GHz and 0.23 GHz, respectively.

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