Muammar Mohamad Isa
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Preferred name
Muammar Mohamad Isa
Official Name
Muammar , Mohamad Isa
Alternative Name
Isa, M. M.
Mohamad Isa, M.
Isa, Muammar Mohamad
Mohamad Isa, Muammar
Isa, M. Mohamad
Main Affiliation
Scopus Author ID
57202563525
Researcher ID
N-2105-2017

Research Output

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  • Publication
    Low voltage low power FGMOS based current mirror
    ( 2017-11-22)
    Nurulain D.
    ;
    Musa F.A.S.
    ;
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Shahrir Rizal Kasjoo
    This paper presents the comparison of a conventional current mirror with the one utilizing floating gate MOSFET transistors (FGMOS) to achieve low power (LP) and low voltage (LV) design. The device structure has been simulated with 0.1μ CMOS technology and 1.2V voltage supply by using SAED 90nm PDK with the Synopsys Custom Designer tool. The FGMOS circuit has shown to have low power consumption of 9.62mW, smaller threshold voltage of 0.2V and Iout of 20 mA. The improvement of 40.1% from conventional current mirror has shown the LV and LP capability of FGMOS transistor.
  • Publication
    Gain enhancement of microstrip patch antenna using artificial magnetic conductor
    ( 2019-03-01)
    Norfatihah Bahari
    ;
    Jamlos M.F.
    ;
    Muammar Mohamad Isa
    The paper presents an artificial magnetic conductor (AMC) structure to enhance the gain of the double microstrip patch antenna. By placing this kind of metamaterial in between the two Rogers RT5880 substrates, the antenna achieved lots of improvement especially in terms of size miniaturization, bandwidth, return loss, gain and efficiency. The antenna is intended to operate at 16 GHz where the prospect fifth generation (5G) spectrum might be located. Integration of AMC structure into the proposed antenna helps to improve nearly 16.3% of gain and almost 23.6% of size reduction.
  • Publication
    Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G Networks Frequencies
    ( 2022-12-01)
    Yi Liang T.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Singh A.K.
    The rapid growth of wireless technology has improved the network’s technology from 4G to 5G, with sub-6 GHz being the centre of attention as the primary communication spectrum band. To effectively benefit this exclusive network, the improvement in the mm-wave detection of this range is crucial. In this work, a silicon self-switching device (SSD) based full-wave bridge rectifier was proposed as a candidate for a usable RF-DC converter in this frequency range. SSD has a similar operation to a conventional pn junction diode, but with advantages in fabrication simplicity where it does not require doping and junctions. The optimized structure of the SSD was cascaded and arranged to create a functional full-wave bridge rectifier with a quadratic relationship between the input voltage and outputs current. AC transient analysis and theoretical calculation performed on the full-wave rectifier shows an estimated cut-off frequency at ~12 GHz, with calculated responsivity and noise equivalent power of 1956.72 V/W and 2.3753 pW/Hz1/2, respectively. These results show the capability of silicon SSD to function as a full-wave bridge rectifier and is a potential candidate for RF-DC conversion in the targeted 5G frequency band and can be exploited for future energy harvesting application.
  • Publication
    Comparative analysis on virtual private network in the internet of things gateways
    ( 2022-10-01)
    Zakaria M.I.
    ;
    Mohd Natashah Norizan
    ;
    Muammar Mohamad Isa
    ;
    Jamlos M.F.
    ;
    Mustapa M.
    A virtual private network (VPN) connects a private network to the internet, primarily the public network, through a secure tunnel. Using a local area network (LAN) segment, users can send and receive data from their colleagues in different locations on the network. The development of VPN allows users to gain access to company applications and databases. Therefore, data can be transmitted through a secure tunnel without the need to configure port forwarding for the internet of things (IoT) gateway, allowing users to access it from any location in the world. A method such as dataplicity and pitunnel was examined to compare with the conventional setting. This research paper examines the current deployment of VPN connections in IoT gateways, discussing their characteristics, benefits, and drawbacks, as well as comparing them. The advantage of this method is that the IoT gateway is always accessible and has internet connectivity, which is a significant benefit. Dataplicity is a more trustworthy option because they offer excellent assistance for both the backend and frontend environments.
  • Publication
    Review of mixer design for low voltage - Low power applications
    ( 2017-09-26)
    Nurulain D.
    ;
    Musa F.A.S.
    ;
    Muammar Mohamad Isa
    ;
    Norhawati Ahmad
    ;
    Shahrir Rizal Kasjoo
    A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.
  • Publication
    Hybrid Statistical and Numerical Analysis in Structural Optimization of Silicon-Based RF Detector in 5G Network
    ( 2022-02-01)
    Yi Liang T.
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Singh A.K.
    ;
    Sobri S.A.
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
  • Publication
    Numerical Simulation and Characterization of Silicon Based OR Logic Gate Operation Using Self-Switching Device
    ( 2021-01-01)
    Goh Y.X.
    ;
    Zakaria N.F.
    ;
    Tan Y.L.
    ;
    Shahrir Rizal Kasjoo
    ;
    Shaari S.
    ;
    Muammar Mohamad Isa
    ;
    Singh A.K.
    Logic gates are the main components inside the integrated circuit used for almost every technological application. Nowadays, in order to enhance the performance of the smart device, while targeting in cut down of the fabrication cost and achieve low power consumption, lithography-based VLSI design technology on silicon are still being widely applied. Hence, an OR gate structure, a silicon based self-switching device (SSD) is introduced and investigated in this project. Such device is believed capable to act as an alternative for a low-powered logic gate application, suitable for CMOS devices. The SSD has an advantage in term of simplicity in fabrication process with a very low threshold voltage. Since SSD characteristics is similar to a conventional diode characteristic, the gate is designed in ATLAS Silvaco device simulator based on a diode logic to perform OR logic function after a validation of the physical and materials parameters. The electrical characterization and structural analysis were also done to observe the electrical performance and physical condition in the device. The simulated design showed a good OR logic output response with the inputs, and acceptable output ranged from around 4.5 to 4.8 V with 5 V HIGH inputs. The results from this OR gate characterization may assist in developing the logic gate for device integration and may act as a reference for future complex integrated circuit design.
  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Idris N.B.
    ;
    Rosli K.A.
    ;
    Zakaria N.F.
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
  • Publication
    Hybrid statistical and numerical analysis in structural optimization of silicon-based RF Detector in 5G Network
    ( 2022-02-01)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Arun Kumar Singh
    ;
    Sharizal Ahmad Sobri
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
      4  3
  • Publication
    Effect of channel length to the frequency response of Si-based Self-Switching Diodes using two-dimensional simulation
    ( 2020-12-18)
    Zarimawaty Zailan
    ;
    Shahrir Rizal Kasjoo
    ;
    Nurul Bariah Idris
    ;
    Khairul Affendi Rosli
    ;
    Nor Farhani Zakaria
    ;
    Muammar Mohamad Isa
    A planar nanodevice, known as the self-switching diode (SSD) which can be exploited as a high-speed rectifier in a wide range of applications. The non-linearity in the I-V characteristic of the SSD structure has been aimed for rectification application at GHz frequencies is reported. In this work simulation has been conducted on Si-based SSD structure with 230 nm L-shaped channels using ATLAS device simulator under the channel length range of 0.5 μm to 1.3 μm. Furthermore, the validity of the cut-off frequency has also been described using a theoretical value of f t at zero bias. The results showed that the optimization in the channel length of the SSD can assist the high cut-off frequency of SSD rectifying behavior to efficiently operate as microwave rectifier.
      7  2