Mohd Zamzuri Mohammad Zain
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Mohd Zamzuri Mohammad Zain
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Mohd Zamzuri , Mohammad Zain
Alternative Name
Mohammad Zain, Mohd Zamzuri
Mohd Zain, Mohd Zamzuri
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Scopus Author ID
57193568678
Researcher ID
C-9161-2011

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Doping content dependencies on the structure modification and bandgap broadening of Al induced sol-gel derived ZnO nanostructures

2021-10 , Marina Marzuki , Mohd Zamzuri Mohammad Zain , Wan Abdul Rahman Assyahid Wan Ibrahim , Nooraizedfiza Zainon , Rozie Nani Ahmad

This paper reports the Al doping content dependence on structure modification and band gap wid-ening of sol-gel synthesised Al-doped ZnO thin films. The precursor, solvent and stabiliser used to prepare ZnO solution were Zinc Acetate Dihydrate, 2-propanol and ethanolamine, respectively. Mo-larity fractions of 0, 4, 6 and 8% of Al (NO3)2 as dopant source was incorporated into ZnO host system and prepared by individual buffer solutions. The prepared sols were subsequently deposited onto ITO glass substrates, and the resultant thin films were characterised. XRD patterns exhibit the polycrys-talline nature of pure and doped ZnO films, with preferred orientations correspond to (1 0 0), (0 0 2) and (1 0 1) planes. Lattice shrinking is indicated by the decrease lattice constant c due to axial com-pression. Peaks shifting towards higher angle are observed implying a structural modification over doped thin films that affects the optical properties, which agrees with the lattice shrinking. The ab-sorption edge has an obvious blueshift to the shorter wavelength with increased dopant content. The thin films’ energy bands were procured by Tauc’s linear extrapolation and was found to be broaden-ing from 3.32 eV to 3.34 eV in 6% Al-doped ZnO. There exists a significant correlation between the applied doping level and the extend of variation of structural properties and ultimately, lattice im-perfection. Doping of smaller-atom-sized Al into ZnO concedes with the Burstein-Moss principles. 6% Al doping imposes the highest peak shift and ultimately has the highest impact on lattice parameter and energy band.

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Publication

Doping content dependencies on the structure modification and bandgap broadening of Al induced sol-gel derived ZnO nanostructures

2021-10 , Marina Marzuki , Mohd Zamzuri Mohammad Zain , Wan Abd Rahman Assyahid Wan Ibrahim , Nooraizedfiza Zainon , Rozie Nani Ahmad

This paper reports the Al doping content dependence on structure modification and band gap wid-ening of sol-gel synthesised Al-doped ZnO thin films. The precursor, solvent and stabiliser used to prepare ZnO solution were Zinc Acetate Dihydrate, 2-propanol and ethanolamine, respectively. Mo-larity fractions of 0, 4, 6 and 8% of Al (NO3)2 as dopant source was incorporated into ZnO host system and prepared by individual buffer solutions. The prepared sols were subsequently deposited onto ITO glass substrates, and the resultant thin films were characterised. XRD patterns exhibit the polycrys-talline nature of pure and doped ZnO films, with preferred orientations correspond to (1 0 0), (0 0 2) and (1 0 1) planes. Lattice shrinking is indicated by the decrease lattice constant c due to axial com-pression. Peaks shifting towards higher angle are observed implying a structural modification over doped thin films that affects the optical properties, which agrees with the lattice shrinking. The ab-sorption edge has an obvious blueshift to the shorter wavelength with increased dopant content. The thin films’ energy bands were procured by Tauc’s linear extrapolation and was found to be broaden-ing from 3.32 eV to 3.34 eV in 6% Al-doped ZnO. There exists a significant correlation between the applied doping level and the extend of variation of structural properties and ultimately, lattice im-perfection. Doping of smaller-atom-sized Al into ZnO concedes with the Burstein-Moss principles. 6% Al doping imposes the highest peak shift and ultimately has the highest impact on lattice parameter and energy band.

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