Mohammad Nuzaihan Md Nor
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Preferred name
Mohammad Nuzaihan Md Nor
Official Name
Mohammad Nuzaihan , Md Nor
Alternative Name
Nuzaihan, M. N.M.
M.Nuzaihan, M. N.
Md Nor, Mohammad Nuzaihan
Nuzaihan, M. M.
Nor, M. N.Md
Md Nor, M. Nuzaihan
Main Affiliation
Scopus Author ID
57219031365
Researcher ID
FMD-4992-2022

Research Output

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Field-Effect Transistor-based Biosensor Optimization: Single Versus Array Silicon Nanowires Configuration

2020-01-01 , Ong C.C. , Mohamad Faris Mohamad Fathil , Mohd Khairuddin Md Arshad , Mohammad Nuzaihan Md Nor , Ruslinda A. Rahim , Uda Hashim , Rafizatul Fitri Abdullah , Mohd Hazmi Mohd Ghazali , Tamjis N.

This paper demonstrated the effect of different number of silicon nanowire transducer channels, in other word single, double, and triple channels towards the performance of field-effect transistor-based biosensor through simulation tool. These silicon nanowire field-effect transistor biosensors were designed and simulated in device simulation modelling tool, Silvaco ATLAS with fixed length, width, and height of the silicon nanowire. Different negatively interface charge density values were applied on the transducer channels’ surface of the biosensors to represent as detected target biomolecules that will bind onto the surface of the transducer regions. Based on the results, more negatively interface charges density values presented on the sensing channels had reduced the electron carrier accumulation at the channel’s interface, therefore, reduced drain current flow between the source and drain terminal. With the increase number of the transducer channels, significant change in drain current for every applied negatively interface charges became more apparent and increased the sensitivity of the biosensor. The triple transducer channels silicon nanowire field-effect transistor biosensor had demonstrated highest sensitivity, that is 2.83 µA/e∙cm2, which indicates it has better response for the detection of interface charges, thus increases chances for transducer channels reaction to the target biomolecules during testing or diagnosis.

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Design and simulation of Cylindrical Stacked Silicon Nanowire (SiNW) field-effect transistors

2023-12 , H’ng Chee Chang , Mohd Khairuddin Md Arshad , Mohamad Faris Mohamad Fathil , Mohammad Nuzaihan Md Nor , Subash Chandra Bose Gopinath , Ramzan Mat Ayub

In continuous effort to increase the current drive without sacrificing the off current and better off gate control on the channel, the MOSFET devices have advanced from classical, planar, single-gate and three-dimensional devices with multi-gate structures. Recently, multi-bridge-channel technology has become a feasible solution beyond FinFET multi-gate structure. In this work, we design Gate-All-Around (GAA) based on silicon nanowire. Numerical simulation based Silvaco Device tools has been used to design multiple number of cylindrical nanowires, then followed by different channel diameter, consisting of 20, 30 and 40 nm. The devices are the characterized on transconductance, threshold voltage, DIBL and subthreshold slope. The simulation results indicate that the device performance is best at a nanowire diameter of 20 nm due to improved gate control over charge distribution. Regarding the number of nanowires, the voltage performance is not significantly affected by Nnw =1 or higher. However, higher numbers of nanowires, such as Nnw = 3, demonstrate improved drain current and transconductance.

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Fabrication and simulation of silicon nanogaps pH sensor as preliminary study for Retinol Binding Protein 4 (RBP4) detection

2025-01 , M. I. Hashim , Mohammad Nuzaihan Md Nor , Mohamad Faris Mohamad Fathil , M. Shaifullah A.S , C. Y. Chean , Nur Hamidah Abdul Halim , Zarimawaty Zailan , Mohd Khairuddin Md Arshad , Muzamir Isa , Ayu Wazira Azhari , M. Syamsul , Rozaimah A.T.

In this research, a silicon nanogap biosensor has the potential to play a significant role in the field of biosensors for detecting Retinol Binding Protein 4 (RBP4) molecules due to its unique nanostructure morphology, biocompatibility features, and electrical capabilities. Additionally, as preliminary research for RBP4, a silicon nanogap biosensor with unique molecular gate control for pH measurement was developed. Firstly, using conventional lithography followed by the Reactive-ion etching (RIE) technique, a nanofabrication approach was utilized to produce silicon nanogaps from silicon-on-insulator (SOI) wafers. The critical aspects contributing to the process and size reduction procedures were highlighted to achieve nanometer-scale size. The resulting silicon nanogaps, ranging from 100 nm to 200 nm, were fabricated precisely on the device. Secondly, pH level detection was performed using several types of standard aqueous pH buffer solutions (pH 6, pH 7, pH 12) to test the electrical response of the device. The sensitivity of the silicon nanogap pH sensor was 7.66 pS/pH (R² = 0.97), indicating that the device has a wide range of pH detecting capacity. This also includes the silicon nanogap biosensor validated by simulation, with the sensitivity obtained being 3.24 μA/e.cm² (R² = 0.98). The simulation of the sensitivity is based on the interface charge (Qf) that represents the concentration of RBP4. The results reveal that the silicon nanogap biosensor has excellent characteristics for detecting pH levels and RBP4 with outstanding sensitivity performance. In conclusion, this silicon nanogap biosensor can be used as a new electrical RBP4 biosensor for biomedical diagnostic applications in the future.

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Simulation and Investigation of Si-Based Piezoelectric Micromachined Ultrasonic Transducer (PMUT) Performances

2023-07-01 , Hasnizah Aris , Rosli M.N.B. , Mohammad Nuzaihan Md Nor , Zaliman Sauli , Norhaimi W.M.W.

Micro-electromechanical system (MEMS) based piezoelectric ultrasonic transducers for acoustic imaging of the surroundings are known as piezoelectric micromachined ultrasonic transducers (PMUTs). This research proposes a structural design of the PMUT with four fixed-guided beams. The beam is subjected to lateral loads, with vectors that are perpendicular to the longitudinal axis. This project simulated Piezoelectric Micromachined Ultrasonic Transducer (PMUT) with three different material properties i.e. Aluminium Nitride (AlN), Lead zirconate titanate (PZT) and Zinc Oxide (ZnO). Based on the study, it was found that reducing the beam dimensions and increasing the plate size will result in the first mode frequency reduction from 1.33x107 Hz to 3.74x106 Hz. Other than that, it was found that AlN PMUT experienced the maximum deflection of 6.3413 to 6.3478 µm when the loads applied in the range of 50 to 200 µN/m2. When the piezoelectric material changed to PZT, we obtained the maximum deflections of 0.3771 to 0.3786 µm when the same loads range applied to the PMUT. As for the ZnO PMUT, the maximum deflections obtained were in between 0.1702 µm to 0.1772 µm with the loads are maintained as in the loads applied to the AlN and PZT. This study proved the significant impact of altering the structural dimensions and material properties of PMUTs on their operational characteristics, specifically the first mode frequency and deflection behavior.

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Impact of buried oxide thickness in substrate-gate integrated silicon nanowire field-effect transistor biosensor performance for charge sensing

2021-07-21 , Tan Y.M. , Mohamad Faris Mohamad Fathil , Mohammad Nuzaihan Md Nor , Norhayati Sabani , Teoh X.Y. , Mohd Khairuddin Md Arshad , Subash Chandra Bose Gopinath , Rahman S.F.A. , Uda Hashim

The paper investigated on performance in charge sensing for substrate-gate integrated silicon nanowire field-effect transistor biosensor at different thickness of the buried oxide layer, sandwiched in between the top-silicon and substrate layers. The device structures with different buried oxide thickness ranging from 100 to 200 nm were designed and simulated using the Silvaco ATLAS device simulation software. The increase of buried oxide thickness reduced the strength of induced electric field that contributes to the formation of inversion layer for current flow through the silicon nanowire channel, hence contributed to the increase in threshold voltage. For simulation of charge sensing, the device demonstrated the ability to identify different interface charge values ranging from -5×1010 to -9×1010 e· cm-2 applied on the surface of the silicon nanowire channel to represent target charge biomolecules that bound to the biosensor in actual detection. Significant change in threshold voltage can be observed due to the applied interface charge density values and was evaluated to determine the sensitivity for charge sensing performance. The device shows better performance when designed with buried oxide thickness of 200 nm at sensitivity of 1.151 V/e· cm-2.

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Top-Down Fabrication of Silicon Nanogap for Detection of Dengue Virus (DENV)

2020-01-01 , Zulkiffli M.N.F. , Mohammad Nuzaihan Md Nor , Mohamad Faris Mohamad Fathil , Zailan Z. , Isa N.A.M. , Ibau C. , Zainol Abidin W.’.B. , Azlan A.S. , Mohd Khairuddin Md Arshad

In this work, a highly sensitive Silicon nanogap biosensor was demonstrated for Deoxyribonucleic acid (DNA) detection related to Dengue virus (DENV). The Silicon nanogap was fabricated using the top–down conventional lithography approach followed by reactive ion etching (RIE) to further thin down the nanogap. The inspections of Silicon nanogap structures were carried out using the scanning electron microscope (SEM) and atomic force microscopy (AFM). The surface of the fabricated Silicon nanogap was functionalized by means of a three-steps procedure involving surface modification, immobilization and hybridization. This procedure acts as a liquid gate control to establish the electrical detection targets of the dengue virus. The electrical detection is based on the changes in the current of the sensor due to the accumulation of the negative charges by the immobilized probe and hybridized target Deoxyribonucleic acid. The limit of detection (LOD) achieved was recorded at 10 pM with a 207 nm of fabricated Silicon nanogap and its sensitivity at 1.5 × 10−10 AM−1. The demonstrated results show that the Silicon nanogap has the excellent properties for detection of dengue virus as biosensor devices.

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Immunosensing prostate-specific antigen: Faradaic vs non-Faradaic electrochemical impedance spectroscopy analysis on interdigitated microelectrode device

2020-11-01 , Ibau, Conlathan , Mohd Khairuddin Md Arshad , Mohammad Nuzaihan Md Nor , Subash Chandra Bose Gopinath , Mohamad Faris Mohamad Fathil , Shahidah Arina Shamsuddin

This work explores Electrochemical Impedance Spectroscopy (EIS) detection for a highly-sensitive quantification of prostate-specific antigen (PSA) in Faradaic (f-EIS) and non-Faradaic modes (nf-EIS). Immobilization of monoclonal antibody specific to PSA (anti-PSA) was performed using 1-ethyl-3-dimethylaminopropylcarbodiimide hydrochloride and N-hydroxysuccinimide crosslinking agents in order to conjugate carboxylic (-COOH) terminated group of 16-Mercaptoundecanoic acid with amine (-NH3+) on anti-PSA epitope. This approach offers simple and efficient approach to form a strong, covalently bound thiol-gold (S–Au) for a reliable SAM layer formation. Studies on the topographic of pristine Au-IDE surface were performed by Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy techniques, meanwhile a 3-dimensional optical surface profiler, Atomic Force Microscopy and X-ray Photoelectron Spectroscopy techniques were used to validate the successful functionalization steps on the sensor transducer surface. Detection of PSA in f-EIS mode was carried out by measuring the response in charge transfer resistance (Rct) and impedance change (Z), meanwhile in nf-EIS mode, the changes in device capacitance was monitored. In f-EIS mode, the sensor reveals a logarithmic detection of PSA in a range of 100 ng/ml down to 0.01 ng/ml in Phosphate Buffered Saline with a recorded sensitivity of 2.412 kΩ/log10 ([PSA] ng/ml) and the limit of detection (LOD) down to 0.01 ng/ml. The nf-EIS detection mode yields a logarithmic detection range of 5000 ng/ml down to 0.5 ng/ml, with a sensitivity of 8.570 nF/log10 ([PSA] ng/ml) and an LOD of 0.5 ng/ml. The developed bio-assay yields great device stability, specificity to PSA and repeatability of detection that would pave its way for the future development into portable lab-on-chip bio-sensing system.

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Polysilicon nanowire with liquid gate control for pH sensing

2018-12 , Mohammad Nuzaihan Md Nor , M. F. Farizal , C. W. Chung , M. N. Aziz , Mohamad Faris Mohamad Fathil , C. Ibau , S. Johari , Mohd Khairuddin Md Arshad

Polysilicon nanowire based sensors have garnered great potential in serving as highly sensitive, label-free and real-time sensing for broad range of applications, that include but not limited to pH values, DNA molecules, proteins and single viruses. In this research, two distinct types of polysilicon nanowires are fabricated, one has an array of nanowires with a 100 nm width and the other is a single nanowire with 100 nm width. Top-down fabrication method is utilized to fabricate the polysilicon nanowire from silicon wafer using the conventional photolithography and reactive ion etching processes. The fabricated polysilicon nanowire have an approximately 100 nm in width, is then undergo surface modification, which is the nanowire is immersed into a 2% 3-aminopropyltriethoxysilane (APTES) to create a molecular binding chemistry, which results in amino (NH2) and silanol (SiOH) groups at the nanowire surface. Since the surface of the polysilicon is hole-dominated (p-type material), it responds well to changes in pH values. In this research, pH sensing is performed based on several types of standard aqueous pH buffer solutions (pH 2, pH 4, pH 7, pH 10 and pH 12) to demonstrate the electrical response of the sensor. At low pH, NH2 group is protonated, resulting in high proton ion acts as a positive gate. At high pH, SiOH group is deprotonated, resulting in bringing negative charges at the polysilicon nanowire surface and acts as a negative gate voltage. The sensitivity of the polysilicon nanowire attained was 207.1 fS/pH for array nanowire and 8.91 fS/pH for single nanowire, which shows excellent properties for pH sensing.

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Nanomanipulation of Functionalized Gold Nanoparticles on GaN

2023-01-01 , Che Seliman M.A. , Ali Yusup N.A. , Ahmad M.A. , Ibau C. , Mohammad Nuzaihan Md Nor , Kawarada H. , Hassan Z. , Packeer F. , Falina S. , Syamsul M.

Gold nanoparticles (AuNPs) are known for their high surface area to volume ratio, which acts as an excellent receptor when placed in between electrodes in sensor applications. Microelectrodes with bar and needle-shaped pointed ends in two configurations, comb and castle wall, were designed to be used for the fabrication of electrodes to observe the relation between the geometry of electrodes and the dielectrophoretic behaviour of AuNPs on p-gallium nitride (p-GaN) substrates. The electrical properties were analyzed before and after the drop cast of AuNPs using current-voltage (I-V) curve method with manual probing. Resistance values of each sample were calculated under reverse bias condition. The effect of the design configurations of the electrodes on the nanomanipulation of AuNPs will be discussed.

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Numerical simulation on the impact of back gate voltage in thin body and thin buried oxide of silicon on insulator (SOI) MOSFETs

2023-10 , K.Y Koay , Mohamad Faris Mohamad Fathil , Mohammad Nuzaihan Md Nor , Ramzan Mat Ayub , Mohd Khairuddin Md Arshad

Silicon-on-Insulator (SOI) technology provides a solution for controlling Short-Channel Effects (SCEs) and enhancing the performance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). However, scaling down SOI MOSFETs to a nanometer scale does not necessarily yield further scaling benefits. Introducing multiple gates, such as a double gate configuration, can effectively mitigate SCEs. Nonetheless, fabricating a flawless double gate structure is an exceedingly challenging endeavor that remains unrealized. The adoption of a back gate bias, with an asymmetrical thickness arrangement between the front and back gates, mimicking the behavior of a double gate, offers an alternative approach. This approach has the potential to modify the electrical characteristics of the device, thus potentially leading to improved control over SCEs. In this study, we employed 2D simulations using Atlas to investigate the influence of back gate biases, namely, -2.0 V, 0 V, and 2.0 V on a 10 nm silicon thickness at the top and a 20 nm buried oxide thickness for n-channel MOSFETs. We focused on key parameters, including threshold voltage (VTh), Drain Induced Barrier Lowering (DIBL), and Subthreshold Swing (SS). The results demonstrate that a negative back gate bias is the most favorable configuration, as it yields superior performance. This translates into more effectively controlled SCEs across all the parameters of interest.

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