Research Output
Electrical Properties of GaN Cap Layer for AlGaN/GaN HEMT
Nanomanipulation of Functionalized Gold Nanoparticles on GaN
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Publication
Metal organic chemical vapor deposition (MOCVD) was used to grow AlGaN/GaN HEMT on a sapphire substrate with a 3.0 nm GaN cap and a sample without a GaN cap. High resolution Xray diffraction (HRXRD) was utilized to investigate the structural characteristics of the materials. The relationship between the electrical properties and two-dimensional electron gas (2DEG) I-V and Hall Effect measurement. The I-V measurement was used to investigate the resistance properties of AlGaN/GaN heterostructures. Hall Effect measurement was used to quantify electron mobility and sheet carrier concentration in both samples. The sample with a 3.0 nm GaN cap exhibited excellent electrical properties with 436.8 Ω/sq sheet resistivity and possessed a high value of sheet carrier concentration 3.46E+14 per cm2.
Publication
Gold nanoparticles (AuNPs) are known for their high surface area to volume ratio, which acts as an excellent receptor when placed in between electrodes in sensor applications. Microelectrodes with bar and needle-shaped pointed ends in two configurations, comb and castle wall, were designed to be used for the fabrication of electrodes to observe the relation between the geometry of electrodes and the dielectrophoretic behaviour of AuNPs on p-gallium nitride (p-GaN) substrates. The electrical properties were analyzed before and after the drop cast of AuNPs using current-voltage (I-V) curve method with manual probing. Resistance values of each sample were calculated under reverse bias condition. The effect of the design configurations of the electrodes on the nanomanipulation of AuNPs will be discussed.