Mohammad Nuzaihan Md Nor
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Preferred name
Mohammad Nuzaihan Md Nor
Official Name
Mohammad Nuzaihan , Md Nor
Alternative Name
Nuzaihan, M. N.M.
M.Nuzaihan, M. N.
Md Nor, Mohammad Nuzaihan
Nuzaihan, M. M.
Nor, M. N.Md
Md Nor, M. Nuzaihan
Main Affiliation
Scopus Author ID
57219031365
Researcher ID
FMD-4992-2022

Research Output

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Faradaic electrochemical impedimetric analysis on MoS2 /Au-NPs decorated surface for C-reactive protein detection

2022-09-01 , Dalila R N. , Mohd Khairuddin Md Arshad , Subash Chandra Bose Gopinath , Ibau C. , Mohammad Nuzaihan Md Nor , Mohamad Faris Mohamad Fathil , Azmi U.Z.M. , Anbu P.

Background: A label-free Faradaic electrochemical impedimetric was developed for a highly sensitive detection of C-reactive protein using a gold interdigitated microelectrode bio-sensing platform enhanced by a gold nanoparticle-decorated molybdenum disulfide (Au-NPs/MoS2) nanosheet via selected chemical linking processes. C-reactive protein (C-RP), a crystalline protein, generates by the liver and hikes when there is inflammation throughout the patients’ body. The concentrations of C-RP plasma levels tend to increase rapidly when the patient facing major injury which will lead to cardiovascular disease (CVD). Methods: The 5 µm microelectrode and gap size g-IDE with the nanostructured materials was demonstrated to increase the impedimetric detection response in Faradaic-mode electrochemical impedance spectroscopy high performance detection environment. The high surface area-to-volume ratio of the modified Au-NPs/MoS2 nanocomposite increased the probes loading onto the transducer and enhanced the impedimetric detection response of the C-RP target post-binding due to an amplified net change in the charge transfer resistance. The developed immunoassay revealed a linear detection of C-RP biomarker in a logarithmic-scale from as low as 1 fg/mL up to 1 µg/mL, and a limit of detection of 0.01 fg/mL. The sensor shows great potential as an early warning risk for cardiovascular disease at a threshold concentration value of C-RP at 1 µg/mL. Significant findings: The biosensor demonstrates an excellent discrimination against other competing proteins in serum, exhibiting the highest predilection to C-RP spiked human serum target. The sensor's reproducibility is reported within an acceptable range of relative standard deviation of 1–4% for n = 3.

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Mixed cations tin-germanium perovskite: A promising approach for enhanced solar cell applications

2024-04-30 , Adli Azizman M.S. , Ayu Wazira Azhari , Naimah Ibrahim , Dewi Suriyani Che Halin , Sepeai S. , Ludin N.A. , Mohammad Nuzaihan Md Nor , Ho Li Ngee

Significant progress has been made over the years to improve the stability and efficiency of rapidly evolving tin-based perovskite solar cells (PSCs). One powerful approach to enhance the performance of these PSCs is through compositional engineering techniques, specifically by incorporating a mixed cation system at the A-site and B-site structure of the tin perovskite. These approaches will pave the way for unlocking the full potential of tin-based PSCs. Therefore, in this study, a theoretical investigation of mixed A-cations (FA, MA, EA, Cs) with a tin-germanium-based PSC was presented. The crystal structure distortion and optoelectronic properties were estimated. SCAPS 1-D simulations were employed to predict the photovoltaic performance of the optimized tin-germanium material using different electron transport layers (ETLs), hole transport layers (HTLs), active layer thicknesses, and cell temperatures. Our findings reveal that EA0.5Cs0.5Sn0.5Ge0.5I3 has a nearly cubic structure (t = 0.99) and a theoretical bandgap within the maximum Shockley-Queisser limit (1.34 eV). The overall cell performance is also improved by optimizing the perovskite layer thickness to 1200 nm, and it exhibits remarkable stability as the temperature increases. The short-circuit current density (Jsc) remains consistent around 33.7 mA/cm2, and the open-circuit voltage (Voc) is well-maintained above 1 V by utilizing FTO as the conductive layer, ZnO as the ETL, Cu2O as the HTL, and Au as the metal back contact. This configuration also achieves a high fill factor ranging from 87 % to 88 %, with the highest power conversion efficiency (PCE) of 31.49 % at 293 K. This research contributes to the advancement of tin-germanium perovskite materials for a wide range of optoelectronic applications.

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Molybdenum disulfide—gold nanoparticle nanocomposite in field-effect transistor back-gate for enhanced C-reactive protein detection

2020-11-01 , Dalila N.R. , Mohd Khairuddin Md Arshad , Subash Chandra Bose Gopinath , Mohammad Nuzaihan Md Nor , Mohamad Faris Mohamad Fathil

Nanofabricated gold nanoparticles (Au-NPs) on MoS2 nanosheets (Au-NPs/MoS2) in back-gated field-effect transistor (BG-FET) are presented, which acts as an efficient semiconductor device for detecting a low concentration of C-reactive protein (C-RP). The decorated nanomaterials lead to an enhanced electron conduction layer on a 100-μm-sized transducing channel. The sensing surface was characterized by Raman spectroscopy, ultraviolet–visible spectroscopy (UV-Vis), atomic force microscopy (AFM), scanning electron microscopy (SEM), and high-power microscopy (HPM). The BG-FET device exhibits an excellent limit of detection of 8.38 fg/mL and a sensitivity of 176 nA/g·mL−1. The current study with Au-NPs/MoS2 BG-FET displays a new potential biosensing technology; especially for integration into complementary metal oxide (CMOS) technology for hand-held future device application. [Figure not available: see fulltext.]

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Impact of buried oxide thickness in substrate-gate integrated silicon nanowire field-effect transistor biosensor performance for charge sensing

2021-07-21 , Tan Y.M. , Mohamad Faris Mohamad Fathil , Mohammad Nuzaihan Md Nor , Norhayati Sabani , Teoh X.Y. , Mohd Khairuddin Md Arshad , Subash Chandra Bose Gopinath , Rahman S.F.A. , Uda Hashim

The paper investigated on performance in charge sensing for substrate-gate integrated silicon nanowire field-effect transistor biosensor at different thickness of the buried oxide layer, sandwiched in between the top-silicon and substrate layers. The device structures with different buried oxide thickness ranging from 100 to 200 nm were designed and simulated using the Silvaco ATLAS device simulation software. The increase of buried oxide thickness reduced the strength of induced electric field that contributes to the formation of inversion layer for current flow through the silicon nanowire channel, hence contributed to the increase in threshold voltage. For simulation of charge sensing, the device demonstrated the ability to identify different interface charge values ranging from -5×1010 to -9×1010 e· cm-2 applied on the surface of the silicon nanowire channel to represent target charge biomolecules that bound to the biosensor in actual detection. Significant change in threshold voltage can be observed due to the applied interface charge density values and was evaluated to determine the sensitivity for charge sensing performance. The device shows better performance when designed with buried oxide thickness of 200 nm at sensitivity of 1.151 V/e· cm-2.

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