Ili Salwani Mohamad
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Preferred name
Ili Salwani Mohamad
Official Name
Mohamad, Ili Salwani
Alternative Name
Salwani, Iii
Salwani Mohamad, Ili
Mohamad, I. S.B.
Mohamad, I. S.
Smohamad, I.
Ili, Salwani Mohamad
Bintimohamad, Ilisalwani
Main Affiliation
Scopus Author ID
55898400600
Researcher ID
ABS-3594-2022

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  • Publication
    Optoelectrical properties of treated CdSe thin films with variations in Indium Chloride concentration
    (MDPI, 2023)
    Hasrul Nisham Rosly
    ;
    Camellia Doroody
    ;
    Muhammad Najib Harif
    ;
    Ili Salwani Mohamad
    ;
    Mustapha Isah
    ;
    Nowshad Amin
    The effect of a nontoxic chloride treatment on the crystallinity and optoelectrical characteristics of a CdSe thin film was studied. A detailed comparative analysis was conducted utilizing four molarities (0.01 M, 0.10 M, 0.15 M, and 0.20 M) of indium (III) chloride (InCl₃), where the results showed a notable improvement in CdSe properties. The crystallite size of treated CdSe samples increased from 31.845 nm to 38.819 nm, and the strain in treated films dropped from 4.9 × 10−³ to 4.0 × 10−³, according to XRD measurements. The highest crystallinity resulted from the 0.10 M InCl₃-treated CdSe films. The In contents in the prepared samples were verified by compositional analysis, and FESEM images from treated CdSe thin films demonstrated compact and optimal grain arrangements with passivated grain boundaries, which are required for the development of a robust operational solar cell. The UV-Vis plot, similarly, showed that the samples were darkened after treatment and the band gap of 1.7 eV for the as-grown samples fell to roughly 1.5 eV. Furthermore, the Hall effect results suggested that the carrier concentration increased by one order of magnitude for samples treated with 0.10 M of InCl₃, but the resistivity remained in the order of 103 ohm/cm², suggesting that the indium treatment had no considerable effect on resistivity. Hence, despite the deficit in the optical results, samples treated at 0.10 M InCl₃ showed promising characteristics as well as the viability of treatment with 0.10 M InCl₃ as an alternative to standard CdCl₂ treatment.
      13  2
  • Publication
    An experimental investigation of spin-on doping optimization for enhanced electrical characteristics in silicon homojunction solar cells: Proof of concept
    ( 2024-06-15)
    Ili Salwani Mohamad
    ;
    Ker P.J.
    ;
    Chelvanathan P.
    ;
    Mohd Natashah Norizan
    ;
    Yap B.K.
    ;
    Tiong S.K.
    ;
    Amin N.
    The pursuit of enhancing the performance of silicon-based solar cells is pivotal for the progression of solar photovoltaics as the most potential renewable energy technologies. Despite the existence of sophisticated methods like diffusion and ion implantation for doping phosphorus into p-type silicon wafers in the semiconductor industry, there is a compelling need to research spin-on doping techniques, especially in the context of tandem devices, where fabricating the bottom cell demands meticulous control over conditions. The primary challenge with existing silicon cell fabrication methods lies in their complexity, cost, and environmental concerns. Thus, this research focuses on the optimization of parameters, such as, deposition of the spin on doping layer, emitter thickness (Xj), and dopant concentration (ND) to maximize solar cell efficiency. We utilized both fabrication and simulation techniques to delve into these factors. Employing silicon wafer thickness of 625 μm, the study explored the effects of altering the count of dopant layers through the spin-on dopant (SOD) technique in the device fabrication. Interestingly, the increase of the dopant layers from 1 to 4 enhances efficiency, whereby, further addition of 6 and 8 layers worsens both series and shunt resistances, affecting the solar cell performance. The peak efficiency of 11.75 % achieved in fabrication of 4 layers dopant. By using device simulation with wxAMPS to perform a combinatorial analysis of Xj and ND, we further identified the optimal conditions for an emitter to achieve peak performance. Altering Xj between 0.05 μm and 10 μm and adjusting ND from 1e+15 cm−3 to 9e+15 cm−3, we found that maximum efficiency of 14.18 % was attained for Xj = 1 μm and ND = 9e+15 cm−3. This research addresses a crucial knowledge gap, providing insights for creating more efficient, cost-effective, and flexible silicon solar cells, thereby enhancing their viability as a sustainable energy source.
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