Ili Salwani Mohamad
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Preferred name
Ili Salwani Mohamad
Official Name
Mohamad, Ili Salwani
Alternative Name
Salwani, Iii
Salwani Mohamad, Ili
Mohamad, I. S.B.
Mohamad, I. S.
Smohamad, I.
Ili, Salwani Mohamad
Bintimohamad, Ilisalwani
Main Affiliation
Scopus Author ID
55898400600
Researcher ID
ABS-3594-2022

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Controlling the Layer Thickness of Zinc Oxide Photoanode and the Dye-Soaking Time for an Optimal-Efficiency Dye-Sensitized Solar Cell

2023-01-01 , Magiswaran K. , Mohd Natashah Norizan , Norsuria Mahmed , Ili Salwani Mohamad , Idris S.N. , Sabri M.F.M. , Amin N. , Sandu A.V. , Vizureanu P. , Nabiałek M. , Mohd Arif Anuar Mohd Salleh

Dye-sensitized solar cells (DSSCs) were developed by exploiting the photovoltaic effect to convert solar energy into electrical energy. The photoanode layer thickness significantly affects the semiconductor film’s ability to carry electronic charges, adsorb sensitizing dye molecules, and lower the recombination of photo-excited electrons injected into the semiconductor. This study investigated the dependence of the zinc oxide (ZnO) photoanode thin-film thickness and the film soaking time in N719 dye on the photocurrent–voltage characteristics. The ZnO photoanode was applied to glass using the doctor blade method. The thickness was varied by changing the scotch tape layers. The ZnO-based DSSC attained an efficiency of 2.77% with three-layered photoanodes soaked in the dye for three hours, compared to a maximum efficiency of 0.68% that was achieved with three cycles using the dip-coating method in other research. The layer thickness of the ZnO photoanode and its optimal adsorption time for the dye are important parameters that determine the efficiency of the DSSC. Therefore, this work provides important insights to further improve the performance of DSSCs.

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Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS

2023-06-01 , Ili Salwani Mohamad , Doroody C. , Alkharasani W.M. , Mohd Natashah Norizan , Chelvanathan P. , Shahahmadi S.A. , Amin N.

In this study, we investigated the pathways for integration of perovskite and silicon solar cells through variation of the properties of the interconnecting layer (ICL). The user-friendly computer simulation software wxAMPS was used to conduct the investigation. The simulation started with numerical inspection of the individual single junction sub-cell, and this was followed by performing an electrical and optical evaluation of monolithic 2T tandem PSC/Si, with variation of the thickness and bandgap of the interconnecting layer. The electrical performance of the monolithic crystalline silicon and CH3NH3PbI3 perovskite tandem configuration was observed to be the best with the insertion of a 50 nm thick (Eg ≥ 2.25 eV) interconnecting layer, which directly contributed to the optimum optical absorption coverage. These design parameters improved the optical absorption and current matching, while also enhancing the electrical performance of the tandem solar cell, which benefited the photovoltaic aspects through lowering the parasitic loss.

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An experimental investigation of spin-on doping optimization for enhanced electrical characteristics in silicon homojunction solar cells: Proof of concept

2024-06-15 , Ili Salwani Mohamad , Ker P.J. , Chelvanathan P. , Mohd Natashah Norizan , Yap B.K. , Tiong S.K. , Amin N.

The pursuit of enhancing the performance of silicon-based solar cells is pivotal for the progression of solar photovoltaics as the most potential renewable energy technologies. Despite the existence of sophisticated methods like diffusion and ion implantation for doping phosphorus into p-type silicon wafers in the semiconductor industry, there is a compelling need to research spin-on doping techniques, especially in the context of tandem devices, where fabricating the bottom cell demands meticulous control over conditions. The primary challenge with existing silicon cell fabrication methods lies in their complexity, cost, and environmental concerns. Thus, this research focuses on the optimization of parameters, such as, deposition of the spin on doping layer, emitter thickness (Xj), and dopant concentration (ND) to maximize solar cell efficiency. We utilized both fabrication and simulation techniques to delve into these factors. Employing silicon wafer thickness of 625 μm, the study explored the effects of altering the count of dopant layers through the spin-on dopant (SOD) technique in the device fabrication. Interestingly, the increase of the dopant layers from 1 to 4 enhances efficiency, whereby, further addition of 6 and 8 layers worsens both series and shunt resistances, affecting the solar cell performance. The peak efficiency of 11.75 % achieved in fabrication of 4 layers dopant. By using device simulation with wxAMPS to perform a combinatorial analysis of Xj and ND, we further identified the optimal conditions for an emitter to achieve peak performance. Altering Xj between 0.05 μm and 10 μm and adjusting ND from 1e+15 cm−3 to 9e+15 cm−3, we found that maximum efficiency of 14.18 % was attained for Xj = 1 μm and ND = 9e+15 cm−3. This research addresses a crucial knowledge gap, providing insights for creating more efficient, cost-effective, and flexible silicon solar cells, thereby enhancing their viability as a sustainable energy source.

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