Faizah Abu Bakar
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Preferred name
Faizah Abu Bakar
Official Name
Faizah, Abu Bakar
Alternative Name
Bakar, Faizah Abu
Bakar, F. A.
Main Affiliation
Scopus Author ID
36809027100
Researcher ID
DWO-5731-2022

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Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications

2022-01-01 , Ali H.A.A.A. , Sohiful Anuar Zainol Murad , Hasan A.F. , Faizah Abu Bakar , Sapawi R.

This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.

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Publication

Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications

2022-01-01 , Ali H.A.A.A. , Sohiful Anuar Zainol Murad , Ahmad Fariz Hasan , Faizah Abu Bakar , Sapawi R.

This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.

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Publication

Design of low power Wallace tree multiplier using modified full adder

2024-02-08 , Ahmad Fariz Hasan , Sohiful Anuar Zainol Murad , Faizah Abu Bakar , Husin M.F.C. , Sapawi R.

High speed and energy-efficient of a device are essential in the electronics industry due to the high demand for multimedia usage and fast technology. Multipliers play a vital role, especially in the processor's integrated circuits, microprocessors, filters, and arithmetic units. Wallace tree multiplier works in parallel, making it an efficient multiplier in terms of area and speed. Internally, a multiplier consists of Adder, which is full Adder (FA) and half Adder (HA). Full adders give a significant contribution to making a multiplier that works very well. A processor or chip performs very efficiently and effectively when running at high speed, in a small area, and at low power. Modification of full Adder in Wallace tree multiplier helps to consume low power during multiplication. In this project, 4-bit and 8-bit Wallace tree multipliers are designed. The design is developed in Verilog HDL and simulated the functionalities using Quartus II software. Mentor Graphic software was used to produce the final layout of 8 x 8-bit Wallace tree multiplier. The modified Wallace tree multiplier shows 64.97mW power lower than the conventional multiplier, which was 65.88mW.

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Publication

Design of High-Quality Factor Active Indictor Using CMOS 0.18-μm Technology for 5G Applications

2022-01-01 , Ali H.A.A.A. , Sohiful Anuar Zainol Murad , Ahmad Fariz Hasan , Faizah Abu Bakar , Sapawi R.

This paper presents high quality factor of active inductor circuit for 5G application. The proposed circuit is based on the differential active inductor (DAI) topology. The DAI is designed using CMOS 0.18 μm technology. The quality factor (Q) can be tuned with the current source values, ranging from 0.5 mA to 3 mA, while the voltage can control the inductance values L. Meanwhile, the frequency range can be controlled with the feedback resistance. The simulation results indicate that the Q factor as large as 262.5k can be achieved with inductor values of 10 nH at frequency 3.2 GHz. In addition, the Q factor of 1650 is obtained at 3.5 GHz. The performance comparison with previously published works is also demonstrated and found that the proposed DAI is suitable for 5G application.

View