Shahrir Rizal Kasjoo
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Preferred name
Shahrir Rizal Kasjoo
Official Name
Shahrir Rizal, Kasjoo
Alternative Name
Kasjoo, S.
Kasjoo, Shahrir R.
Kasjoo, S. R.
Shah K.
Main Affiliation
Scopus Author ID
36809748400
Researcher ID
ABI-6061-2020

Research Output

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  • Publication
    Improved rectification performance and terahertz detection in hybrid structure of self-switching device (SSD) and planar barrier diode (PBD) using two-dimensional device simulation
    ( 2020-01-01)
    Zakaria N.F.
    ;
    Shahrir Rizal Kasjoo
    ;
    Isa M.M.
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Song A.
    Recently, simulations of In0.48Ga0.52As-based Planar Barrier Diode (PBD) and Self- Switching Device (SSD) as millimeter-wave rectifiers were reported. Both PBD and SSD have a planar structure, but with different insulating shapes and working principles. In this work, a hybrid structure of the reported PBD and SSD in a parallel configuration is proposed, to exploit the advantages of each device. The advantages of high rectifying properties in the SSD and fast switching rate of the PBD are combined in this hybrid structure in order to obtain an improved rectification performance at zero-bias in the near terahertz frequency region. Analysis of the curvature co-efficient, γ, which is defined as the ratio of the second order to the first order derivative of the device’s I-V function was performed to evaluate the rectification performance. AC transient analyses were then executed in various frequencies to imitate the high-frequency signal inputs. By using this hybrid structure, the highest value of γ achieved has been improved to ~19 V-1 at 70 mV, and ~6 V-1 at zero- bias (compared to the previous results on PBDs). The estimated cut-off frequency obtained was ~360 GHz (0.36 THz), operating at zero-bias.
  • Publication
    Improved rectification performance and terahertz detection in hybrid structure of self-switching device (SSD) and planar barrier diode (PBD) using two-dimensional device simulation
    ( 2020-01-01)
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Muammar Mohamad Isa
    ;
    Zarimawaty Zailan
    ;
    Mohd Khairuddin Md Arshad
    ;
    Song A.
    Recently, simulations of In0.48Ga0.52As-based Planar Barrier Diode (PBD) and Self- Switching Device (SSD) as millimeter-wave rectifiers were reported. Both PBD and SSD have a planar structure, but with different insulating shapes and working principles. In this work, a hybrid structure of the reported PBD and SSD in a parallel configuration is proposed, to exploit the advantages of each device. The advantages of high rectifying properties in the SSD and fast switching rate of the PBD are combined in this hybrid structure in order to obtain an improved rectification performance at zero-bias in the near terahertz frequency region. Analysis of the curvature co-efficient, γ, which is defined as the ratio of the second order to the first order derivative of the device’s I-V function was performed to evaluate the rectification performance. AC transient analyses were then executed in various frequencies to imitate the high-frequency signal inputs. By using this hybrid structure, the highest value of γ achieved has been improved to ~19 V-1 at 70 mV, and ~6 V-1 at zero- bias (compared to the previous results on PBDs). The estimated cut-off frequency obtained was ~360 GHz (0.36 THz), operating at zero-bias.