Sanna Taking
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Preferred name
Sanna Taking
Official Name
Sanna, Taking
Alternative Name
Taking, Sanna
Taking, S.
Main Affiliation
Scopus Author ID
35559852900
Researcher ID
I-7284-2015

Research Output

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  • Publication
    Self-switching diodes as RF rectifiers: Evaluation methods and current progress
    ( 2019-06-01)
    Zakaria N.
    ;
    Shahrir Rizal Kasjoo
    ;
    Isa M.
    ;
    Zarimawaty Zailan
    ;
    Arshad M.
    ;
    Sanna Taking
    In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.
  • Publication
    TCAD simulation of AlGaN/GaN HEMT grown on high-resistivity silicon substrate
    ( 2024-02-08)
    Sanna Taking
    ;
    Ofiare A.
    ;
    Ahmad N.
    ;
    Musa A.Z.
    ;
    Sendekisager K.
    ;
    Isa M.M.
    ;
    Shahrir Rizal Kasjoo
    ;
    Wasige E.
    This paper studies GaN device structure on silicon substrates. The fabricated device, with LG of 4-μm and WG of 100-μm, demonstrates a maximum drain current of 780mA/mm and a threshold voltage of - 4V. The two-dimensional Silvaco simulator tools are used to analyze and model the fabricated device. The simulation results closely match the experimental findings, validating the developed model's accuracy. These outcomes signify that the study can be a reference for modeling other GaN-based devices in future material growth and process development.