Noraini Othman
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Preferred name
Noraini Othman
Official Name
Noraini, Othman
Alternative Name
Othman, Noraini Binti
Othman, Norreha
Othman, Noraini Bt
Othman, Noraini (UUM)
Othman, Noraini A.
Othman, N. A.
Othman, N.
Othman, Noraini
Main Affiliation
Scopus Author ID
57189034221
Researcher ID
IAI-5023-2023

Research Output

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A Controlled Growth of Carbon Nanofibers (CNFs) on Graphene

2023-12-01 , Fiyatillah M. , Syarifah Norfaezah Sabki , Norzilah Abdul Halif , Kita L.K.W. , Muhammad Asri Idris , Noraini Othman , Abd Rahim A.F.

Carbon nanofibers (CNFs) have superior properties such as high conductivity, good mechanical strength, high specific surface area, and chemical stability. CNFs-graphene hybrid material can be used as a high-quality electrode in electronics applications. In the CNFs on graphene synthesis, the growth parameters must be well controlled. This work observes the evolution of the CNF's growth on graphene on Ni at reaction temperatures of 800oC and 860oC and at different reaction times of 30 min, 60 min, and 120 min. This research aims to find suitable conditions for obtaining controllable growth of CNFs on graphene. Based on the SEM measurement, it was found that the 860oC reaction temperature at 60 min and 120 min reaction time led to longer and smaller widths of CNFs with high coverage and distribution on graphene. The CNFs on graphene formation were confirmed by the XRD analysis.

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A Review: Synthesis and Mechanism of Growth of the Carbon Nanotubes (CNTs) – Graphene Hybrid Material and its Application as Electrodes

2023-07-01 , Mishthafiyatillah , Syarifah Norfaezah Sabki , Norzilah Abdul Halif , Muhammad Asri Idris , Noraini Othman

The CNTs–graphene hybrids have many advantages and potential for use in a wide range of electronic applications as electrodes. The CNTs–graphene hybrid structure outperforms the structure of each material in terms of characteristics and performance. There are several methods to grow CNTs. This paper reviews the chemical vapor deposition (CVD) method used to synthesize CNTs–graphene hybrid material. This paper discusses the processes and growth parameters of the synthesis of the CNTs-graphene hybrid. This paper also discusses the growth mechanism and kinetics of CNTs. In addition, the potential and performance of CNTs–Graphene hybrid material as electrodes in batteries are also reviewed.

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Carbon Nanofibers (CNFs) Synthesis on Graphene/Ni Thin Film: An Analysis on the Effect of Carrier Gas Flow Rate

2023-01-01 , Fiyatillah M. , Syarifah Norfaezah Sabki , Norzilah Abdul Halif , Kita L.K.W. , Jun H.Q. , Muhammad Asri Idris , Noraini Othman , Abd Rahim A.F.

The pursuit of high-performance materials for interconnects and electrodes in various electronic applications has led to the exploration of carbon nanotubes (CNTs)-graphene hybrid materials due to their potential to surpass copper (Cu) in terms of thermal conductivity. This study aimed to grow CNTs on graphene. However, the applied growth parameters led to the formation of carbon nanofibers (CNFs) on graphene. CNFs-graphene hybrids may have lower thermal conductivity compared to CNTs-graphene hybrids. This investigation aims to understand the growth evolution of the CNFs at a varied carrier gas flow rate. This work investigates the CNFs' growth on graphene on a nickel (Ni) thin film substrate under a growth temperature of 860°C in 2 hours. By varying the gas flow rate, this research aims to discern the optimal conditions for achieving controllable CNFs growth on graphene. This work found that the higher carrier gas flow rate led to better formation of CNFs with a more uniform coverage and smaller width. The XRD results confirm the formation of CNFs on graphene.

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Performance Analysis of a Double-Gate Junctionless Transistor with Varied Doping and Gate Underlap using Device Simulator

2021-01-01 , Afiqah Nasir N.N. , Noraini Othman , Syarifah Norfaezah Sabki , Farhanah Abd Rahim A.

In this work, the impact of doping concentrations and gate underlap towards the electrical performance of a double-gate junctionless transistor (DG-JLT) were investigated using three-dimensional device simulator. The results show that the parameter of doping concentrations (Nd) has a greater impact towards the electrical performance of the transistor as compared to the gate underlap length (Lun). This can be seen in the results of leakage current (Ioff) and Drain-Induced Barrier Lowering (DIBL), where variations in Nd causes differences as high as 5 decades to be obtained for Ioff together with significant increase in DIBL. In overall, it was found that Nd=1×1018 cm-3 provides the best results in terms of the lowest DIBL and Ioff and the highest Ion/Ioff ratio. Meanwhile, longer Lun is found to give better electrical characteristics. The results obtained in this work can be used to further determine the most significant factors among the structural and material parameters that influence the electrical characteristics of a JLT.

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