Nor Farhani Zakaria
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Nor Farhani Zakaria
Official Name
Nor Farhani, Zakaria
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Zakaria, N. Fa
Zakaria, N. F.
Zakaria, N.
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Scopus Author ID
57191032557
Researcher ID
AFT-7132-2022

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  • Publication
    Design and simulation of InGaAs-based planar electronic nanodevices as terahertz rectifiers based on curvature coefficient analysis
    ( 2019)
    Nor Farhani Zakaria
    The “Terahertz gap” frequencies between 0.1 to 10 THz possess unique characteristics with a lot of promising application in various fields such as safe imaging, medical and explosive detections. However, limited numbers of optimal (current responsivity, β > 3.5 V-1) detectors and sources in this region leave researchers only a few alternatives in exploring the region. In this work, characterizations using ATLAS device simulator aimed to increase β performance of Self-switching Diode (SSD) and simulations of new planar devices; the Planar Barrier Diode (PBD) and Self-switching Planar Barrier Diode (SSPBD) are reported. The β is mainly contributed by a parameter known as the curvature coefficient, γ which is derived from the current-voltage (I-V) behavior of the device. As such, the γ was analyzed in this work, not only by varying the device’s geometrical structure, but also by implementing different dielectric relative permittivity of the insulating material ranging from 1.0 – 10 under temperature range of 300 – 600 K. The results showed that increased temperature degraded the SSD’s and PBD’s rectifying performance due to increased reverse current which can deteriorate the nonlinearity of the device’s I-V characteristic. For SSD, the γ of ~32 V-1 and 30 V-1 has been achieved at 30 mV and zero-bias, respectively. The cut-off frequency, fc of SSD attained in this work was ~80 GHz, operating at unbiased condition. In addition, an enhanced barrier is introduced in the new PBD device, which contributed to higher switching speed in the channel. The working principle of the new PBD is explained using thermionic emission theory. By employing the optimized structure parameters, the zero-bias γ of ~4 V-1, with peak of ~14 V-1 at 0.10 V bias were achieved. With DC bias of 50 mV to exploit the rectification peak, the fc of the PBD was attained at 270 GHz. In addition, hybrid structure of SSPBD shows improved performance in fc with detection of 360 GHz at zero-bias. Zero-bias γ of ~6 V-1, with peak of ~19 V-1 at 70 mV bias were observed in the SSPBD. The β of >3.5 V-1 in all simulated devices indicates optimal conversion ability as a rectifying device. The results obtained in this work proved the functionality of SSD as mm-wave rectifiers, and the new devices of PBD and SSPBD as THz rectifiers and may assist in future improvement of the devices.
  • Publication
    Hybrid statistical and numerical analysis in structural optimization of silicon-based RF Detector in 5G Network
    ( 2022-02-01)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Arun Kumar Singh
    ;
    Sharizal Ahmad Sobri
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
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