The influence of orientation for nanostructures on electronics properties is evaluated theoretically in this paper. The orientation structures show remarkable influence on the silicon semiconductor materials. The geometries of nanostructure have mainly an influence on the surface charges activity. Orientation (111) has the highest charges activity among the three nanostructures orientations. The greatest enhancement of the band structure is obtained attributed to the extremely higher specific surface area due to the geometry influence. Thus, this finding results analysis described herein will serve as an effective benchmark for the design and subsequent nanostructures fabrication of the nanostructures.
