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  5. Material selection for CMOS compatible high Q and high frequency MEMS disk resonator using Ashby approach
 
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Material selection for CMOS compatible high Q and high frequency MEMS disk resonator using Ashby approach

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
ISSN
1985-5761
Date Issued
2016-07
Author(s)
G. M. Sundaram
Mahesh Angira
Navneet Gupta
Kamaljit Rangra
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%20No.%202%202016/Vol_9_No_2_2016_6_157-164.pdf
https://hdl.handle.net/20.500.14170/2761
Abstract
In this paper, the most appropriate material for MEMS Disk resonator compatible with CMOS technology is selected using the Ashby approach. Materials indices are formulated based on three primary performance parameters, namely high Q, high resonant frequency, and low process temperature. The selection chart shows that for high Q and high frequency, polySi0.35Ge0.65 is the best possible material for MEMS resonator. The close match between theoretical and experimental findings validates our proposed study.
Subjects
  • Material Selection

  • CMOS

  • MEMS

File(s)
Material selection for CMOS compatible high Q and high frequency MEMS disk resonator using Ashby approach.pdf (554.27 KB)
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