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  4. International Journal of Nanoelectronics and Materials (IJNeaM)
  5. Simulation model of multi-junction InxGa1-xN solar cells
 
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Simulation model of multi-junction InxGa1-xN solar cells

Journal
International Journal of Nanoelectronics and Materials (IJNeaM)
Date Issued
2010-01
Author(s)
Wisam J. Aziz
Universiti Sains Malaysia
Kamarulazizi Ibrahim
Universiti Sains Malaysia
Handle (URI)
https://ijneam.unimap.edu.my/
https://ijneam.unimap.edu.my/images/PDF/IJNEAM%202010/IJNEAM_3_5_43-52.pdf
https://hdl.handle.net/20.500.14170/1909
Abstract
In this model we investigate theoretically the characteristics of multi junction InxGa1-xN series-connected solar cells under air mass 1.5 global irradiance spectrum using Matlab program. The doping levels of p-type and n-type were 5x10^18 cm^-3 and 1x10&18 cm^-3 respectively. The efficiency is found to be varied from 18.01% for single junction to 42.55% for five junctions. The enhancement in Voc was observed from the lower values of total thickness.
Subjects
  • Materials

  • High efficiency

  • Multi-junction solar ...

File(s)
Simulation model of multi-junction InxGa1-xN solar cells.pdf (112.13 KB)
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Nov 19, 2024
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