This paper proposed an underlap double-gate MOSFET (U-DG MOSFET) structure with gate stacking. Better sub-threshold slope and RF performance can be obtained from DG MOSFET with symmetrical/asymmetrical drain-source configuration. Simulation shows better results for its upgraded resilient against short channel effects (SCE). The analog and RF performances at 32 nm technology were estimated. Furthermore, the drive capability (on current) of the device, the intrinsic gain (gₘRₒ), the transconductance (gₘ), and transconductance generation factor (gₘ/Id) were also evaluated. By using non-quasi-static approach, high frequency parameters such as intrinsic (Cgs and Cgd), parasitic resistance (Rgs and Rgd), transport delay (τₘ), the unity gain cut-off frequency (fₜ), and the maximum frequency of oscillation (fₘₐₓ) were also calculated. A single stage amplifier was then designed to evaluate the performance of the proposed device.
