Temperature characterization and performance enhancement of a 7nm finFET structure using HK materials and gaAs as metal gate (MG)

The progress in semiconductor technology has played a crucial role in enhancing human existence by introducing significant innovations. The pursuit of high-performance devices utilizing novel materials has emerged as a crucial avenue for surmounting the existing limitations of silicon-based technologies. This paper presents an evaluation of the diverse short channel effects (SCEs) exhibited by the double gate n-FinFET structure, considering the influence of temperature on channel materials using metal gate (MG) as Gallium Arsenide (GaAs) alongside High-K dielectric oxide materials such as Hafnium Oxide (HfO2), Lanthanum Oxide (La2O3) and Lanthanum Aluminum Oxide (LaAlO3) in comparison with traditional Silicon Dioxide (SiO2). The investigation and presentation of the impact of gate length (Lg), channel width (Wch), doping, and varying Temperature (275k-450k) on several short channel effects (SCEs), namely Drain Induced Barrier Lowering (DIBL), Subthreshold Slope (SS), threshold voltage (Vth) roll-off, Transconductance (gm) and ON-OFF current ratio (ION / IOFF) have been thoroughly examined using the aforementioned materials. The utilization of FinFET technology using HK-MG presents notable benefits in terms of mitigating the subthreshold swing while concurrently maintaining a low drain-induced barrier lowering (DIBL) effect.