Mohd Zamzuri Mohammad Zain
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Preferred name
Mohd Zamzuri Mohammad Zain
Official Name
Mohd Zamzuri , Mohammad Zain
Alternative Name
Mohammad Zain, Mohd Zamzuri
Mohd Zain, Mohd Zamzuri
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Scopus Author ID
57193568678
Researcher ID
C-9161-2011

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  • Publication
    Dependence of deposition bath temperature for p-electrodeposited-Cuâ‚‚O onto n-TiOâ‚‚/ZnO bilayer thin films
    (Elsevier, 2023)
    Nurliyana Mohamad Arifin
    ;
    Fariza Mohamad
    ;
    Loh Zhi Xin
    ;
    Rosniza Hussin
    ;
    Anis Zafirah Mohd Ismail
    ;
    Shazleen Ahmad Ramli
    ;
    Norazlina Ahmad
    ;
    Nik Hisyamudin Muhd Nor
    ;
    Mohd Zainizan Sahdan
    ;
    Mohd Zamzuri Mohammad Zain
    ;
    Masanobu Izaki
    The synthesis of semiconductor materials is crucial to produce the best properties of heterojunction thin films solar cell. Titanium dioxide (TiO2) is coupled with zinc oxide (ZnO) to promote high transmittance due to low utilization of the solar spectrum. In this project, p-Cu2O as absorbing layer was deposited onto n-TiO2/ZnO bilayer thin film which acts as window layer in order to complete the device. Several bath temperatures of 30, 40, 50 and 60 °C were manipulated during Linear Sweep Voltammetry (LSV) measurement and electrodeposition process for p-Cu2O thin film. The LSV measurement was employed to determine the potential value and electrochemical properties of p-Cu2O thin film. Based on findings, the suitable deposition potential chosen is − 0.4 V vs Ag/AgCl. The p-Cu2O thin film deposited at bath temperature of 40 °C exhibited the highest diffraction peak intensity in the (111)-preferred plane orientation showing high crystallinity. The surface morphology of homogeneous and well-defined triangular shape with thickness of 4.93μm was observed. The estimated bandgap energy of 1.92 eV acquired indicated to p-Cu2O thin film. The n-TiO2/ZnO bilayer/p-Cu2O heterojunction thin film was successfully fabricated and showed significant electrical rectification properties. Here in, bath temperature influenced to the enhancement of heterointerface growth development in several properties.
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