Safizan Shaari
Thumbnail Image
Preferred name
Safizan Shaari
Official Name
Safizan, Shaari
Alternative Name
Shaari, Safizan
Shaari, S.
Main Affiliation
Scopus Author ID
55807708700
Researcher ID
AAR-5562-2021

Research Output

Filters

3
Reset filters

Settings
Now showing 1 - 3 of 3
  • Publication
    The modelling of SiC Gate Oxide thickness based on thermal oxidation temperatures and durations for high-voltage applications
    (Walailak University, 2023)
    Nuralia Syahida Hashim
    ;
    Banu Poobalan
    ;
    Nor Farhani Zakaria
    ;
    Manikandan Natarajan
    ;
    Safizan Shaari
    This research has shown that the oxide thickness for silicon carbide (SiC) based wide materials can be predicted using regression techniques in wet/dry nitrided or wet/dry non-nitrided thermal oxidation process conditions for high voltage applications by employing 2 different regression techniques: Polynomial and linear regression. The R-squared (R2) and Mean Absolute Percentage Error (MAPE) techniques are used to evaluate the regression models. Furthermore, this work investigates and presents a calculation of gate oxide thickness that is correlated to gate voltage ranges for high voltage applications. In this work, the thermal oxidation process environment is classified into 3 different processing conditions: conventional (dry and wet), dry nitrided (NO,N2O), and wet nitrided (HNO3 vapour). The findings from this study showed that wet oxidation combined with nitrided elements can produce thicker and better-quality gate oxide as compared to conventional dry and wet oxidation techniques. The outcome of this work clearly shows that gate oxide thickness may be derived from silicon carbide-based wide-bandgap materials utilizing linear and polynomial approaches using thermal oxidation durations at different temperatures for high-power applications. The regression models and formulations produced in this work are expected to aid the researchers in determining appropriate oxide thickness under practicable process conditions, with the exception of real thermal oxidation process conditions. Hence, the outcome of this work is expected to save the processing time, material, and cost of the power semiconductor device fabrication technology, mainly for high voltage applications.
  • Publication
    Silicon Self-Switching Diode (SSD) as a Full-Wave Bridge Rectifier in 5G networks frequencies
    ( 2022)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Arun Kumar Singh
    ;
    Mohd Khairuddin Md Arshad
    The rapid growth of wireless technology has improved the network’s technology from 4G to 5G, with sub-6 GHz being the centre of attention as the primary communication spectrum band. To effectively benefit this exclusive network, the improvement in the mm-wave detection of this range is crucial. In this work, a silicon self-switching device (SSD) based full-wave bridge rectifier was proposed as a candidate for a usable RF-DC converter in this frequency range. SSD has a similar operation to a conventional pn junction diode, but with advantages in fabrication simplicity where it does not require doping and junctions. The optimized structure of the SSD was cascaded and arranged to create a functional full-wave bridge rectifier with a quadratic relationship between the input voltage and outputs current. AC transient analysis and theoretical calculation performed on the full-wave rectifier shows an estimated cut-off frequency at ~12 GHz, with calculated responsivity and noise equivalent power of 1956.72 V/W and 2.3753 pW/Hz1/2, respectively. These results show the capability of silicon SSD to function as a full-wave bridge rectifier and is a potential candidate for RF-DC conversion in the targeted 5G frequency band and can be exploited for future energy harvesting application.
      1  14
  • Publication
    Hybrid statistical and numerical analysis in structural optimization of silicon-based RF detector in 5G network
    ( 2022-01-21)
    Tan Yi Liang
    ;
    Nor Farhani Zakaria
    ;
    Shahrir Rizal Kasjoo
    ;
    Safizan Shaari
    ;
    Muammar Mohamad Isa
    ;
    Mohd Khairuddin Md Arshad
    ;
    Arun Kumar Singh
    ;
    Sharizal Ahmad Sobri
    In this study, a hybrid statistical analysis (Taguchi method supported by analysis of variance (ANOVA) and regression analysis) and numerical analysis (utilizing a Silvaco device simulator) was implemented to optimize the structural parameters of silicon-on-insulator (SOI)-based self-switching diodes (SSDs) to achieve a high responsivity value as a radio frequency (RF) detector. Statistical calculation was applied to study the relationship between the control factors and the output performance of an RF detector in terms of the peak curvature coefficient value and its corresponding bias voltage. Subsequently, a series of numerical simulations were performed based on Taguchi’s experimental design. The optimization results indicated an optimized curvature coefficient and voltage peak of 26.4260 V−1 and 0.05 V, respectively. The alternating current transient analysis from 3 to 10 GHz showed the highest mean current at 5 GHz and a cut-off frequency of approximately 6.50 GHz, indicating a prominent ability to function as an RF detector at 5G related frequencies.
      1  8