Now showing 1 - 2 of 2
  • Publication
    Partial Discharge Rise Time Characteristic based on Experimental Measurement in Power Cable
    This study presents a comprehensive investigation into the rise time characteristics of partial discharges (PD) in cable insulation through experimental measurements. Partial discharges are a critical phenomenon in high-voltage systems, serving as an early indicator of insulation degradation. Understanding the rise time of partial discharges is essential for assessing the severity of insulation defects and ensuring the reliability of power cable systems. The experimental setup involved controlled conditions to induce partial discharges in cable samples, allowing for precise measurement and analysis of the rise time. The study explores the correlation between rise time and different factors such as cable design, insulation material, and defect type. Results indicate that the rise time of partial discharges exhibits distinct patterns based on these factors, providing valuable insights into the nature of insulation defects. The findings contribute to the development of effective diagnostic tools for condition monitoring in power cable systems, ultimately enhancing the reliability and safety of electrical infrastructure.
      1
  • Publication
    First Principles Enhanced Electronic Band Structure of Back Contact in CdTe Solar Cells using DFT+U Method
    ( 2023-01-01)
    Ahmad N.I.
    ;
    ;
    Kar Y.B.
    ;
    Doroody C.
    ;
    ; ;
    Jamal A.
    Cadmium telluride (CdTe) superstrate solar cells have captivated the industry with their remarkable cost-effectiveness. However, optimizing the composition and optoelectrical properties of optimal back surface field (BSF) which can act as a lattice matching interface between the back contact and absorber layer remains a key challenge due to the work function disparity of p-CdTe with metal contacts. In this study, the influence of the Hubbard U parameter on the calculated electronic properties of ZnTe as an optimal BSF compound is presented using the density functional theory (DFT) technique. The Hubbard U value progressively increased from 1 to 4.2 to analyze its influence on the band diagram and Total Density of States (TDOS) in a full comparison of DFT and DFT+U approaches. As the value of Hubbard U increased, the band gap energy exhibited a corresponding increase from 1.20 eV to 2.24 eV, respectively. In comparison, the DFT+U approach with a value of 4.2 exhibited superior accuracy in predicting the band gap of ZnTe, yielding a value of 2.24 eV that closely approximated experimental measurements. This finding reinforces the relevance of employing Hubbard U to achieve more accurate and reliable band gap values for any material doping.
      1